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Author

Ga Won Yang

Institution: Kookmin University
Observed institution: Kookmin University
ORCID: 0000-0002-0812-517X
Observed ORCID: 0000-0002-0812-517X
OpenAlex ID: A5091166205
Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs
2021 · Ga Won Yang, Jingyu Park, et al. · IEEE Transactions on Electron Devices · 63
Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature
2022 · Sangwon Lee, Jingyu Park, et al. · IEEE Electron Device Letters · 17
Unscrambling for Subgap Density-of-States in Multilayered MoS2Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy
2021 · Ga Won Yang, Seung Gi Seo, et al. · IEEE Access · 8
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Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications
2022 · Sungju Choi, Ga Won Yang, et al. · IEEE Transactions on Electron Devices · 5
Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation
2025 · Sangwon Lee, Ho Jung Lee, et al. · Results in Physics · 1
Works count: 5
Citation count: 94
H-index: 4
I10-index: 2
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