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Emi Kawashima
Observed names:
E. Kawashima,
Emi KAWASHIMA
Institution:
Idemitsu Kosan (Japan)
Observed institution:
Idemitsu Kosan (Japan)
ORCID:
0009-0005-4525-9029
Observed ORCID:
0009-0005-4525-9029
OpenAlex ID:
A5091279651
Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm 2 V ‐1 s ‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays
2022
·
Md. Hasnat Rabbi
, Suhui Lee
, et al.
·
Small Methods
·
53
Crystallization behavior of amorphous indium–gallium–zinc-oxide films and its effects on thin-film transistor performance
2016
·
Ayaka Suko
, JunJun Jia
, et al.
·
Japanese Journal of Applied Physics
·
41
PDF
Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance
2015
·
Junjun Jia
, Yoshifumi Torigoshi
, et al.
·
Applied Physics Letters
·
26
7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization
2021
·
Mamoru Furuta
, Kenta Shimpo
, et al.
·
SID Symposium Digest of Technical Papers
·
22
Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films
2016
·
Junjun Jia
, Yoshifumi Torigoshi
, et al.
·
Applied Surface Science
·
17
Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors
2016
·
Mami N. Fujii
, Yasuaki Ishikawa
, et al.
·
AIP Advances
·
15
8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm 2 /Vs and High Level of Uniformity on the Large Size Substrates
2023
·
Masashi Tsubuku
, Hajime Watakabe
, et al.
·
SID Symposium Digest of Technical Papers
·
11
PDF
81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display
2023
·
Md. Hasnat Rabbi
, Jinbaek Bae
, et al.
·
SID Symposium Digest of Technical Papers
·
9
4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display
2022
·
Md. Hasnat Rabbi
, Suhui Lee
, et al.
·
SID Symposium Digest of Technical Papers
·
9
Influence of active layer thickness on performance and reliability of InSnZnO thin-film transistors
2012
·
Dapeng Wang
, Chaoyang Li
, et al.
·
International Workshop on Active-Matrix Flatpanel Displays and Devices
·
9
In-gap states of an amorphous In–Ga–Zn–O thin film studied via high-sensitivity ultraviolet photoemission spectroscopy using low-energy photons
2021
·
Ryotaro Nakazawa
, Atsushi Matsuzaki
, et al.
·
Applied Physics Express
·
8
PDF
Self-heating induced instability of oxide thin film transistors under dynamic stress
2016
·
Kahori Kise
, Mami N. Fujii
, et al.
·
Applied Physics Letters
·
8
The Deterioration Phenomenon of Amorphous InSnZnO Transistors Derived from the Process of Annealing
2013
·
S. Tomai
, H. Hayasaka
, et al.
·
ECS Solid State Letters
·
7
PDF
Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states
2024
·
Ryotaro Nakazawa
, Atsushi Matsuzaki
, et al.
·
Journal of Applied Physics
·
6
Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
2021
·
Yuki Tsuruma
, Emi Kawashima
, et al.
·
Scientific Reports
·
5
PDF
High Mobility Oxide TFT Using Poly-Crystalline Oxide Semiconductor on Gen.6 Glass Substrate
2023
·
Masashi Tsubuku
, Hajime Watakabe
, et al.
·
Proceedings of the International Display Workshops
·
2
High Performance Organic Semiconductors with High Field-Effect Mobilities and Low Contact Resistances for Flexible Displays
2011
·
Kota TERAI
, Emi KAWASHIMA
, et al.
·
IEICE Transactions on Electronics
·
1
Polycrystalline In‐Ga‐O Thin‐Film Transistor With Field‐Effect Mobility Over 40 cm 2 /Vs—Mobility Modeling and Self‐Heating Simulation
2026
·
Mutsumi Kimura
, Masato Hiramatsu
, et al.
·
Journal of the Society for Information Display
(Invited) Why Poly-OS IGO TFT Exhibits Mobilities >50 cm2/Vs
2024
·
Yuki Tsuruma
, Koji Yamaguchi
, et al.
·
ECS Meeting Abstracts
Density of States Analysis of an Amorphous In-Ga-Zn-O Thin Film studied via High-Sensitivity Ultraviolet, Hard X-ray, and Low-Energy Inverse Photoemission Spectroscopies
2021
·
Ryotaro Nakazawa
, Atsushi Matsuzaki
, et al.
·
The Japan Society of Applied Physics
Polycrystalline IGO:H films for high-mobility thin-film transistors
2021
·
Kenta Simpo
, Daiki Tanaka
, et al.
·
The Japan Society of Applied Physics
Evaluation of in-gap states of a-IGZO thin films by High Sensitivity Ultraviolet Photoemission Spectroscopy and Photothermal Deflection Spectroscopy
2020
·
Ryotaro Nakazawa
, Atsushi Matsuzaki
, et al.
·
The Japan Society of Applied Physics
Crystallinity and electrical properties of Ar+O 2 +H 2 sputtered In–Ga–O thin films
2019
·
Kenta Shimpo
, Daichi Koretomo
, et al.
·
The Japan Society of Applied Physics
In‐Sn‐Zn酸化物薄膜の構造的,電気的,および光学的性質に及ぼす窒素添加の効果【Powered by NICT】
2017
·
Junjun Jia
, Torigoshi Yoshifumi
, et al.
·
Applied Surface Science
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Works count:
25
Citation count:
250
H-index:
9
I10-index:
7
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