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Mani Vaidyanathan
Observed names:
M. Vaidyanathan,
Vaidyanathan Mani,
Vaidyanathan, Mani
Institution:
University of Alberta
Observed institutions:
University of British Columbia,
University of Waterloo,
University of Alberta,
Alberta Hospital Edmonton,
University of Alberta Hospital,
University of California San Diego,
Center for Wireless Communications
show all 7
ORCID:
0000-0002-0853-175X
Observed ORCID:
0000-0002-0853-175X
OpenAlex ID:
A5091626780
A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers
2004
·
Chengzhou Wang
, M. Vaidyanathan
, et al.
·
IEEE Journal of Solid-State Circuits
·
185
Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs
2016
·
Zhi Cheng Yuan
, Shahriar Rizwan
, et al.
·
IEEE Transactions on Electron Devices
·
86
High-frequency performance projections for ballistic carbon-nanotube transistors
2006
·
S. Hasan
, S. Salahuddin
, et al.
·
IEEE Transactions on Nanotechnology
·
75
A theory of high-frequency distortion in bipolar transistors
2003
·
M. Vaidyanathan
, M. Iwamoto
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
45
Extrapolated f/sub max/ of heterojunction bipolar transistors
1999
·
M. Vaidyanathan
, D.L. Pulfrey
·
IEEE Transactions on Electron Devices
·
44
Self-consistent ac quantum transport using nonequilibrium Green functions
2010
·
Diego Kienle
, Mani Vaidyanathan
, et al.
·
Physical Review B
·
36
PDF
RF Linearity Potential of Carbon-Nanotube Transistors Versus MOSFETs
2013
·
Ahsan Ul Alam
, Christopher Martin Sinclair Rogers
, et al.
·
IEEE Transactions on Nanotechnology
·
19
Impact of Contact Resistance on the fT and fmax of Graphene vs. MoS2 Transistors
2016
·
Kyle D. Holland
, Ahsan U. Alam
, et al.
·
IEEE Transactions on Nanotechnology
·
18
RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part I: Intrinsic Results
2011
·
Navid Paydavosi
, Ahsan Ul Alam
, et al.
·
IEEE Transactions on Electron Devices
·
18
Optimum bias conditions for linear broadband InGaP/GaAs HBT power amplifiers
2003
·
M. Iwamoto
, C.P. Hutchinson
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
18
RF Performance Projections of Negative-Capacitance FETs: fT , f max, and gmfT/ID
2020
·
Ji Kai Wang
, Prasad S. Gudem
, et al.
·
IEEE Transactions on Electron Devices
·
17
Optimum bias conditions for linear broad-band InGaP/GaAs HBT power amplifiers
2002
·
M. Iwamoto
, C.P. Hutchinson
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
17
RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part II: Extrinsic Results
2011
·
Navid Paydavosi
, Joseph P. Rebstock
, et al.
·
IEEE Transactions on Electron Devices
·
16
Understanding the Frequency- and Time-Dependent Behavior of Ballistic Carbon-Nanotube Transistors
2009
·
N. Paydavosi
, K.D. Holland
, et al.
·
IEEE Transactions on Nanotechnology
·
16
RF Linearity Performance Potential of Short-Channel Graphene Field-Effect Transistors
2015
·
Ahsan Ul Alam
, Kyle David Holland
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
15
Sustained Benefits of NCFETs Under Extreme Scaling to the End of the IRDS
2020
·
Thomas Cam
, Ji Kai Wang
, et al.
·
IEEE Transactions on Electron Devices
·
14
RF Performance Limits and Operating Physics Arising From the Lack of a Bandgap in Graphene Transistors
2013
·
Kyle D. Holland
, Navid Paydavosi
, et al.
·
IEEE Transactions on Nanotechnology
·
14
Effective base-collector time constants for calculating the maximum oscillation frequency of bipolar transistors
1995
·
Mani Vaidyanathan
, David J. Roulston
·
Solid-State Electronics
·
11
Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETs
2019
·
Zhi Cheng Yuan
, Prasad S. Gudem
, et al.
·
IEEE Transactions on Electron Devices
·
10
Electronics From the Bottom Up: Strategies for Teaching Nanoelectronics at the Undergraduate Level
2010
·
Mani Vaidyanathan
·
IEEE Transactions on Education
·
10
An appraisal of the one-flux method for treating carrier transport in modern semiconductor devices
1996
·
M. Vaidyanathan
, D.L. Pulfrey
·
Solid-State Electronics
·
10
Effects of quasi-ballistic base transport on the high-frequency characteristics of bipolar transistors
1997
·
M. Vaidyanathan
, D.L. Pulfrey
·
IEEE Transactions on Electron Devices
·
9
Nonquasi-Static Effects and the Role of Kinetic Inductance in Ballistic Carbon-Nanotube Transistors
2009
·
Navid Paydavosi
, Mohammad Meysam Zargham
, et al.
·
IEEE Transactions on Nanotechnology
·
8
Monte Carlo Simulation of Carbon Nanotube Devices
2004
·
Sayed Hasan
, Jing Guo
, et al.
·
Journal of Computational Electronics
·
8
Impact of Effective Mass on the Scaling Behavior of the $f_{T}$ and $f_{\bf max}$ of III–V High-Electron-Mobility Transistors
2012
·
S. Ahmed
, K. D. Holland
, et al.
·
IEEE Transactions on Nanotechnology
·
7
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Works count:
48
Citation count:
775
H-index:
15
I10-index:
21
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