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Robert J. Antinone

Observed names: Antinone, R., Antinone,Robert J., R. J. Antinone, R.J. Antinone
Observed institution: Case Western Reserve University
OpenAlex ID: A5091848510
The modeling of resistive interconnects for integrated circuits
1983 · R.J. Antinone, G.W. Brown · IEEE Journal of Solid-State Circuits · 79
How to prevent circuit zapping
1987 · R.J. Antinone · IEEE Spectrum · 12
Electrical overstress protection for electronic devices
1986 · R.J. Antinone, P.A. Young, et al. · 12
How to prevent circuit zapping: Modern chips are extrasensitive to electrical overstress, but the underlying physics is well understood, giving designers a growing arsenal of protective techniques
1987 · Robert J. Antinone · IEEE Spectrum · 8
A Simple Transistor Neutron Hardness Screen Using Scattering Parameters
1973 · H. J. Tausch, R. J. Antinone, et al. · IEEE Transactions on Nuclear Science · 4
Radiation Response Study of New Radiation-Hardened Low Power TTL Series
1971 · R. J. Olson, D. R. Alexander, et al. · IEEE Transactions on Nuclear Science · 4
Computer Aided Analysis of Radiation Hardened CMOS MSI/LSI Designs
1977 · Robert J. Antinone, David R. Alexander, et al. · IEEE Transactions on Nuclear Science · 2
Electrical Overstress Protection of Submicron Devices.
1984 · R. J. Antinone, P. A. Young · 1
Handbook of Modeling for Circuit Analysis Including Radiation Effects
1979 · D. R. Alexander, P.A. Young, et al. · Defense Technical Information Center (DTIC) · 1
Specifications for Microcircuit Electrical Overstress Tolerance.
1978 · Robert J. Antinone · 1
MSI Testing at Dose Rates from 109 to 1012 RAD (S1)/S
1971 · D. R. Alexander, R. J. Antinone · IEEE Transactions on Nuclear Science · 1
HPM (high power microwave) testing of electronic components
1989 · R.J. Antinone, Waichiu Ng · NASA STI/Recon Technical Report N
Characterization of Sandia Laboratories expanded linear array silicon gate CMOS standard cells
1980 · R.J. Antinone, D. R. Alexander, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Handbook of modeling for circuit analysis including radiation effects. Final report
1979 · D. R. Alexander, P.A. Young, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Instrumentation and Test Procedures for Neutron Rapid Annealing Tests on TTL MSI Circuits.
1976 · Worcester,Craig R., Young,Phillip A., et al. · Defense Technical Information Center (DTIC)
A theoretical study of the permanent and transient effects of ionizing radiation on the electrical performance of metal oxide semiconductor on sapphire inverters
1976 · R.J. Antinone, D. H. Phillips · Defense Technical Information Center (DTIC)
Complementary metal oxide semiconductor hardened functions and radiation failure criteria
1975 · R.J. Antinone, James D. Ledbetter · Defense Technical Information Center (DTIC)
Complementary metal oxide semiconductor hardened functions and radiation failure criteria. Final report, 1 Aug 1973--15 Nov 1974
1975 · R.J. Antinone, James D. Ledbetter · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
MSI TESTING AT DOSE RATES FROM 10$sup 9$ TO 10$sup 12$ RAD (Si)/S.
1971 · D. R. Alexander, R.J. Antinone · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Advanced electronic technology and the design and development of an integral circuit, multi-channel telemetry system for bio-medical applications Final report, Mar. 1966 - Feb. 1969
1969 · R.J. Antinone, Wen H. Ko, et al. · NASA Technical Reports Server (NASA)
Works count: 21
Citation count: 125
H-index: 4
I10-index: 3
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