Author

M. Handami

Institution: Tissemsilt University

Observed institution: Tissemsilt University

OpenAlex ID: A5092405912

Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters

2023 · Abdelmalek Douara, Abdelaziz Rabehi, et al. · Revista Mexicana de Física · 11

Works count: 1

Citation count: 11

H-index: 1

I10-index: 1