Author

Vaidehi Vijay Painter

Observed name: Painter, Vaidehi Vijay

Institution: Indian Institute of Technology Dharwad

Observed institution: Indian Institute of Technology Dharwad

ORCID: 0009-0004-5053-1384

Observed ORCID: 0009-0004-5053-1384

OpenAlex ID: A5092641230

Influence of Field Plate, Gate Width, and Voltage Dependence of Thermal Resistance ( R TH) for AlGaN/GaN HEMT

2024 · Vaidehi Vijay Painter, Raphael Sommet, et al. · IEEE Transactions on Electron Devices · 25

PDF

Estimation of Zero-Field Activation Energy for Traps in Fe- and C-Doped GaN-Based HEMTs

2023 · P. Vigneshwara Raja, Vaidehi Vijay Painter, et al. · IEEE Transactions on Electron Devices · 10

PDF

Maximum, effective, and average thermal resistance for GaN-based HEMTs on SiC, Si and sapphire substrates

2025 · Kaushik Shivanand Powar, Venkata Komalesh Tadepalli, et al. · Solid-State Electronics · 9

Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs

2025 · Vaidehi Vijay Painter, Raphael Sommet, et al. · Micro and Nanostructures · 5

2025 · Vaidehi Vijay Painter, Raphael Sommet, et al. · IEEE Transactions on Device and Materials Reliability · 3

A New Method to Estimate Surface Donor Density (N TD ) in AlGaN/GaN HEMT by Validated DCT Simulations

2025 · Vaidehi Vijay Painter, Raphael Sommet, et al. · physica status solidi (RRL) - Rapid Research Letters · 2

PDF

Source‐Connected Field‐Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor

2026 · Vaidehi Vijay Painter, Audrey Martin, et al. · physica status solidi (a) · 1

PDF

Advanced Field-Plate Structures to Mitigate Thermal Resistance and DIBL in 150 nm GaN RF HEMTs

2026 · Painter, Vaidehi Vijay, Sommet, Raphaël, et al. · HAL

Coupled TCAD and 3D ANSYS Thermal Simulation for Hotspot Analysis in GaN HEMTs

2026 · Mohammed Boussekri, Vaidehi Vijay Painter, et al. · European Microwave Integrated Circuits Conference

Etude des pièges sur des configurations de traitement de surface du transistor HEMT InAlN/GaN à dopage fer

2026 · Aminajia Tazifua, Bertus, Gaillard, Florent, et al. · HAL

PDF

Advanced Field-Plate Structures to Mitigate Channel Temperature and Thermal Resistance of 150 nm AlGaN/GaN HEMTs

2026 · Vaidehi Vijay Painter, Raphael Sommet, et al. · IEEE Transactions on Device and Materials Reliability

Passivation Layer Thickness-Dependent Thermal Dissipation Properties of Source-Connected Field-Plated AlGaN/GaN HEMT

2025 · Vaidehi Vijay Painter, Raphael Sommet, et al. · IEEE International Conference on Emerging Electronics (ICEE)

Estimation de l’énergie d’activation réelle sous champ nul d’un piège dans la zone tampon des transistors HEMT dopés Fe

2024 · Gaillard, Florent, Painter, Vaidehi Vijay, et al. · HAL

PDF

Inspection of Trapping and Detrapping Dynamics in Fe- and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy

2024 · P. Vigneshwara Raja, Vaidehi Vijay Painter, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

PDF

Estimation of thermal resistance (RTH) and thermal time constant for AlGaN/GaN HEMTs using TCAD simulation

2023 · Painter, Vaidehi Vijay, Nallatamby, Jean-Christophe, et al. · HAL

PDF

Coupling Thermal Resistance in AlGaN/GaN HEMTs with Varying Gate Fingers and Spacing

· Painter, Vaidehi Vijay, Sommet, Raphaël, et al. · HAL

Works count: 16

Citation count: 55

H-index: 4

I10-index: 2