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Xing Chen

Observed names: Xing Chen Mai, Xing-Chen Mai
ORCID: 0009-0000-6471-6575
Observed ORCID: 0009-0000-6471-6575
OpenAlex ID: A5100371805
HV 65V nLDMOSs Engineering of ESD Enhancement by the Drain Side with Parasitic SCR Modulations
2022 · Zhi-Wei Liu, Shen-Li Chen, et al. · International Conference on Applied System Innovation · 2
High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities
2023 · Ting-En Lin, Shen-Li Chen, et al. · IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) · 1
ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect
2023 · Xiu-Yuan Yang, Xing-Chen Mai, et al. · IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) · 1
Impacts of Floating Poly on Electrostatic Discharge Protection of Power-Managed High-Voltage Laterally Diffused Metal Oxide Semiconductor Components
2023 · Xing Chen Mai, Shen-Li Chen, et al. · Electronics · 1
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Analytical Model and Mechanism of a Linear Extended Gate for Lateral Internal Superjunction Power Devices
2022 · Lijuan Wu, Jinsheng Zeng, et al. · Silicon · 1
ESD-capability Improvement of Ultra-high Voltage nLDMOS Components by the Drain Side Engineering
2021 · Jhong-Yi Lai, Shen-Li Chen, et al. · IEEE International Future Energy Electronics Conference (IFEEC) · 1
A Ultra-Low Specific On-Resistance and Extended Gate SJ LDMOS Structure
2021 · Lijuan Wu, Jiaqi Chen, et al. · Transactions on Electrical and Electronic Materials · 1
Robust ESD Capability of High-voltage nLDMOSs with Embedded Floating P+ Structures in the Drain Side
2023 · Yu-Jie Chung, Shen-Li Chen, et al. · International Conference on Applied System Innovation
ESD-capability Impacts of the RESURF NBL Length in High-voltage nLDMOSs
2023 · Xing-Chen Mai, Shen-Li Chen, et al. · International Conference on Applied System Innovation
Study of Turns Impact on ESD-immunity of High-voltage nLDMOSs with a Constant Floating-poly
2022 · Xing-Chen Mai, Xiu-Yuan Yang, et al. · IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)
ESD-ability Analysis of High Voltage nLDMOSs with the Drain-side Parasitic Schottky/Embedded STI
2022 · Yu-Jie Chung, Shen-Li Chen, et al. · IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)
ESD-immunity Study of High-voltage nLDMOS with Vertical Parasitic Schottky Structures in the Source End
2022 · Xing-Chen Mai, Shen-Li Chen, et al. · 2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA)
ESD-ability Enhancement of High Voltage pLDMOSs with the Discrete Source Side
2022 · Yu-Jie Chung, Shen-Li Chen, et al. · 2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA)
An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSs
2022 · Zhi-Wei Liu, Shen-Li Chen, et al. · IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
ESD Capability Analysis of High-voltage nLDMOSs by the Bulk Terminal Modulation
2022 · Jhong-Yi Lai, Shen-Li Chen, et al. · IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
An ESD Investigation of 100 V UHV nLDMOSs Embedded with Schottky/SCR in the Drain Side
2022 · Jhong-Yi Lai, Shen-Li Chen, et al. · International Conference on Applied System Innovation
Enhance the ESD Reliability of HV pLDMOS Transistors with the Embedded Horizontal SCR and Schottky Diode Techniques
2021 · Zhi-Wei Liu, Shen-Li Chen, et al. · IEEE International Future Energy Electronics Conference (IFEEC)
A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance
2021 · Lijuan Wu, Haifeng Wu, et al. · Silicon
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Avalanche breakdown of the Schottky didode analyzed by physically-based simulation
2016 · Ke Xu, Xing Chen · IEEE International Conference on Wireless Information Technology and Systems
Works count: 19
Citation count: 8
H-index: 1
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