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Taeho Kim

HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
2017 · Seungyeol Oh, Taeho Kim, et al. · IEEE Electron Device Letters · 277
Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory
2015 · Yiming Yang, Xingyue Peng, et al. · Nano Letters · 197
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A 667 MHz Logic-Compatible Embedded DRAM Featuring an Asymmetric 2T Gain Cell for High Speed On-Die Caches
2011 · Ki Chul Chun, Pulkit Jain, et al. · IEEE Journal of Solid-State Circuits · 129
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing
2022 · Venkateswarlu Gaddam, Giuk Kim, et al. · ACS Applied Materials & Interfaces · 72
Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films
2018 · Taeho Kim, Jinsung Park, et al. · Applied Physics Letters · 62
Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing
2018 · Taeho Kim, Sanghun Jeon · IEEE Transactions on Electron Devices · 61
Ar plasma treated ZnON transistor for future thin film electronics
2015 · Eunha Lee, Taeho Kim, et al. · Applied Physics Letters · 57
Modeling manufacturing yield and reliability
1999 · Taeho Kim, Way Kuo · IEEE Transactions on Semiconductor Manufacturing · 46
Reliability, Yield, and Stress Burn-In
1998 · Way Kuo, Wei-Ting Kary Chien, et al. · Springer eBooks · 46
High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory
2022 · Giuk Kim, Sangho Lee, et al. · Journal of Materials Chemistry C · 44
Boosting Carrier Mobility in Zinc Oxynitride Thin-Film Transistors via Tantalum Oxide Encapsulation
2019 · Taeho Kim, Min Jae Kim, et al. · ACS Applied Materials & Interfaces · 44
The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3
2016 · Taeho Kim, Yunyong Nam, et al. · IEEE Electron Device Letters · 41
Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor
2016 · Yunyong Nam, Hee-Ok Kim, et al. · Journal of Information Display · 41
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A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density
2022 · Wanik Cho, Jongseok Jung, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 40
Clinical, Radiographic, and Morphometric Risk Factors for Adjacent and Remote Vertebral Compression Fractures Over a Minimum Follow-up of 4 Years After Percutaneous Vertebroplasty for Osteoporotic Vertebral Compression Fractures: Novel Three-dimensional Voxel-Based Morphometric Analysis
2019 · Hong-Jae Lee, Jinah Park, et al. · World Neurosurgery · 38
Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia
2024 · Seokjung Yun, Hoon Kim, et al. · ACS Applied Electronic Materials · 32
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High mobility and high stability glassy metal-oxynitride materials and devices
2016 · Eunha Lee, Taeho Kim, et al. · Scientific Reports · 31
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Deep user identification model with multiple biometric data
2020 · Hyoung-Kyu Song, Ebrahim AlAlkeem, et al. · BMC Bioinformatics · 28
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Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate
2020 · Taeho Kim, Minho An, et al. · AIP Advances · 28
Defects and Charge-Trapping Mechanisms of Double-Active-Layer In–Zn–O and Al–Sn–Zn–In–O Thin-Film Transistors
2017 · Youngin Goh, Taeho Kim, et al. · ACS Applied Materials & Interfaces · 26
Fast transient charging behavior of HfInZnO thin-film transistor
2015 · Taeho Kim, Ji-Hyun Hur, et al. · Applied Physics Letters · 26
The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications
2022 · Taeho Kim, Giuk Kim, et al. · Advanced Functional Materials · 23
A 50Gb/s PAM-4 Bi-Directional Plastic Waveguide Link with Carrier Synchronization Using PI-Based Costas Loop
2022 · Ha-II Song, Hanho Choi, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 23
The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors
2016 · Taeho Kim, Jihyun Hur, et al. · Semiconductor Science and Technology · 23
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Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors
2022 · Giuk Kim, Dong Han Ko, et al. · ACS Applied Materials & Interfaces · 22
Works count: 130
Citation count: 2,027
H-index: 23
I10-index: 50
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