Author

Rongkun Wang

Institutions: Huaqiao University, Shandong University, State Key Laboratory of Crystal Materials

Observed institutions: Huaqiao University, Shandong University, State Key Laboratory of Crystal Materials

ORCID: 0000-0003-4607-2088

Observed ORCIDs: 0000-0003-4607-2088, 0009-0003-8147-9075

OpenAlex ID: A5100714850

Influence of crystal orientation and incident plane on n-type 4H-SiC wafer slicing by using picosecond laser

2024 · Yongping Yao, Qiu Chen, et al. · Optics & Laser Technology · 40

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

2022 · Hanwen Wang, Qiu Chen, et al. · Crystals · 38

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Correlation between the response performance of epitaxial graphene/SiC UV-photodetectors and the number of carriers in graphene

2021 · Xiaomeng Li, Rongkun Wang, et al. · Carbon · 25

Spatial variation of lattice plane bending of 4H-SiC substrates

2017 · Yingxin Cui, Xiaobo Hu, et al. · CrystEngComm · 19

Effect of nitrogen doping concentration on 4H‐SiC laser slicing

2025 · Qiu Chen, Yongping Yao, et al. · Journal of the American Ceramic Society · 15

Mechanism Reveal of Threading Edge Dislocation Multiplication during the Initial Stage of 4H-SiC Growth

2025 · Xinyue Hou, Xiufei Hu, et al. · Crystal Growth & Design · 12

Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals

2016 · Xuejian Xie, Yan Peng, et al. · Journal of Alloys and Compounds · 10

Comparison of Measurements with Finite-Element Analysis of Silicon-Diaphragm-Based Fiber-Optic Fabry–Perot Temperature Sensors

2019 · Rongkun Wang, Xuejian Xie, et al. · Sensors · 9

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Self-powered epitaxial graphene/SiC-C heterojunction UV photodetector

2024 · Huiqing Chen, Huiqing Chen, et al. · Sensors and Actuators A Physical · 5

Comparative study on substrate quality of laser slicing and wire saw slicing for SiC wafers

2025 · Jianfei Zhang, Yiyang Chen, et al. · CrystEngComm · 4

A review of laser-assisted SiC wafer manufacture: Green and sustainable slicing and planarization for integrated applications

2025 · Jianfei Zhang, Jianfei Zhang, et al. · Materials Today Communications · 3

Unlocking different types of basal plane dislocations and its evolution in 4H-SiC

2025 · Shan Yang, Kerui Chen, et al. · Journal of Material Science and Technology · 3

Toward low-resistivity p-type SiC single crystals: Controlling doping and defects

2026 · Jiangfeng Wang, Xuejian Xie, et al. · Progress in Crystal Growth and Characterization of Materials · 2

High-uniformity, high-quality single-crystal diamond bulk without PCD rim for field-effect transistors

2025 · Saibin Han, Lei Ge, et al. · Diamond and Related Materials · 2

Interface kinetic engineering of heavily N-doped 4H-SiC: From surface step dynamics to polytype stability

2026 · Jiaqi Tian, Laibin Zhao, et al. · Applied Surface Science · 1

Filtering and Interfacial Interaction Mechanism of TaC for Carbon Inclusions Suppression in PVT-Grown SiC Crystals

2026 · Xinglong Wang, Shan Yang, et al. · ACS Applied Materials & Interfaces · 1

Geometric-contrast-driven threading dislocations identification in 4H-SiC via synergistic micro-etching and X-ray topography

2026 · Kerui Chen, Jiangfeng Wang, et al. · Materials Science and Engineering B · 1

Finite element analysis of fiber-optic Fabry–Perot pressure sensors based on silicon diaphragms

2019 · Rongkun Wang, Longfei Xiao, et al. · Applied Optics · 1

Laser slicing of 4H-SiC wafers with different doping types: Multiscale mechanism investigation and deep learning-based processing strategy

2026 · Jianfei Zhang, Laibin Zhao, et al. · Journal of Material Science and Technology

Packaging Design and Thermal Characterization of 3D Double-Sided Cooling Automotive SiC Power Modules with Reliable Junction Temperature Sensing

2026 · Chunzhen Li, Tianliang Lin, et al. · Sensors

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Quantitative wafer-scale photoelastic mapping of residual stress in 4H-SiC

2026 · Xinyue Hou, Xiufei Hu, et al. · Materials Characterization

Correction to “Mechanism Reveal of Threading Edge Dislocation Multiplication during the Initial Stage of 4H-SiC Growth”

2026 · Xinyue Hou, Xiufei Hu, et al. · Crystal Growth & Design

Microstructural Interface Analysis and Multilayer Damage Mechanism in Laser-Sliced 4H-SiC Wafers

2026 · Bixue Li, Jianfei Zhang, et al. · International Journal of Precision Engineering and Manufacturing

Origin, Evolution and Termination of Micropipes in 4H-SiC Single Crystals

2025 · Xinyue Hou, Xiufei Hu, et al.

Study on Surface Damage of 12-Inch Silicon Carbide Wafers During Diamond Wire Cutting

2025 · Qingyu Li, Yong Yang, et al.

Works count: 27

Citation count: 191

H-index: 8

I10-index: 7