Author

Tomonori Tajima

Observed name: Tajima, Tomonori

Institution: Tokyo Institute of Technology

Observed institutions: Tokyo Institute of Technology, Tokyo University of Science

OpenAlex ID: A5100829434

Ion beam machining of Si layer deposited on Zerodur® substrate

2008 · Yuichi Kurashima, Tomonori Tajima, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 3

Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N+-source/drain buried in channel undercut

2010 · Toru Kanazawa, Kazuya Wakabayashi, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 2

InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric

2010 · Toru Kanazawa, Wakabayashi Kazuya, et al. · IEICE Technical Report; IEICE Tech. Rep. · 1

Iii-v族サブミクロンチャネルを有する高移動度mosfet

2010 · 金澤, 徹, Kanazawa, Toru, et al. · Institutional Repositories DataBase (IRDB)

「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性

2009 · 若林, 和也, wakabayashi, kazuya, et al. · Institutional Repositories DataBase (IRDB)

Fabrication of InP/InGaAs channel MOSFET with MOVPE selectively regrown source

2009 · Toru Kanazawa, Hisashi Saito, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source

2009 · 金澤, 徹, Kanazawa, Toru, et al. · Institutional Repositories DataBase (IRDB)

Works count: 8

Citation count: 6

H-index: 2

I10-index: