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Author

Takanori Matsuzaki

ORCID: 0009-0007-4344-9835
Observed ORCID: 0009-0007-4344-9835
OpenAlex ID: A5100860552
Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor
2012 · Hiroki Inoue, Takanori Matsuzaki, et al. · IEEE Journal of Solid-State Circuits · 103
1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor
2011 · Takanori Matsuzaki, Hiroki Inoue, et al. · IEEE International Memory Workshop (IMW) · 30
High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits
2024 · Shunpei Yamazaki, Fumito Isaka, et al. · Communications Materials · 29
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UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems
2008 · Yoshiyuki Kurokawa, Takayuki Ikeda, et al. · IEEE Journal of Solid-State Circuits · 28
A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT
2013 · Shuhei Nagatsuka, Takanori Matsuzaki, et al. · IEEE International Memory Workshop (IMW) · 22
10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
2022 · Toshihiko Saito, Toshiki Mizuguchi, et al. · SID Symposium Digest of Technical Papers · 14
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
2024 · Takeya Hirose, Yuki Okamoto, et al. · IEEE Journal of the Electron Devices Society · 13
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Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM
2023 · Naomi Yazaki, Ryosuke Motoyoshi, et al. · IEEE Journal of the Electron Devices Society · 12
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32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
2022 · Munehiro Kozuma, Yuki Okamoto, et al. · SID Symposium Digest of Technical Papers · 12
A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor
2014 · Atsuo Isobe, Hikaru Tamura, et al. · Symposium on VLSI Circuits · 12
Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c -axis aligned crystalline oxide semiconductor transistor with L of 60 nm
2015 · Tatsuya Onuki, Kiyoshi Kato, et al. · Japanese Journal of Applied Physics · 11
12.2 Micro Short-Circuit Detector Including S/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC
2019 · Hiroki Inoue, Takeshi Aoki, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 10
Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage
2019 · Eri Yamamoto, Seiya Saito, et al. · ECS Transactions · 8
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16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method
2015 · Takanori Matsuzaki, Tatsuya Onuki, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 8
Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM
2024 · Hiroki Inoue, Takeya Hirose, et al. · IEEE International Memory Workshop (IMW) · 6
SRAM with c-axis aligned crystalline oxide semiconductor: Power leakage reduction technique for microprocessor caches
2014 · Takahiko Ishizu, Kiyoshi Kato, et al. · IEEE International Memory Workshop (IMW) · 6
State retention flip flop architectures with different tradeoffs using crystalline indium gallium zinc oxide transistors implemented in a 32-bit normally-off microprocessor
2014 · Niclas Sjökvist, Takuro Ohmaru, et al. · Japanese Journal of Applied Physics · 6
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Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
2025 · Shunpei Yamazaki, Tatsuya Onuki, et al. · International Journal of Ceramic Engineering & Science · 4
Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm
2023 · Masashi Oota, Toshiki Hamada, et al. · International Conference on Solid State Devices and Materials (SSDM) · 4
A 16-level-cell memory with c -axis-aligned a – b -plane-anchored crystal In–Ga–Zn oxide FET using threshold voltage cancel write method
2016 · Takanori Matsuzaki, Tatsuya Onuki, et al. · Japanese Journal of Applied Physics · 4
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UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems
2007 · Yoshiyuki Kurokawa, Takayuki Ikeda, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 4
(Invited) Display and LSI Applications of Oxide Semiconductor LSIs (OS LSIs) Using Crystalline In–Ga–Zn Oxide (IGZO): Applications Related to Coronavirus COVID-19 Pandemic
2020 · Tatsuya Onuki, Yuki Okamoto, et al. · ECS Transactions · 3
A 16-Level-Cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET
2015 · Takanori Matsuzaki, Tatsuya Onuki, et al. · IEEE International Memory Workshop (IMW) · 3
(Invited) Multilevel Cell Nonvolatile Memory with Field-effect Transistor Using Crystalline Oxide Semiconductor
2014 · Takanori Matsuzaki, Tatsuya Onuki, et al. · ECS Transactions · 1
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Crystal Indium Oxide FET with High Mobility and Excellent Reliability Characteristics
2026 · Nozomi Kamata, Chihiro Inagaki, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 35
Citation count: 353
H-index: 11
I10-index: 12
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