Author

Yu-Xuan Zeng

Institution: Fudan University

Observed institution: Fudan University

ORCID: 0009-0006-9671-5837

Observed ORCID: 0009-0006-9671-5837

OpenAlex ID: A5101033774

MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

2024 · Yu-Xuan Zeng, Xi-Rui Wang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 10

Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors

2025 · Yu-Xuan Zeng, Wei Huang, et al. · Nanomaterials

Works count: 2

Citation count: 10

H-index: 1

I10-index: 1