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Masakazu Arai

Observed names: Arai, Masakazu, Masakazu ARAI
OpenAlex ID: A5101041961
Novel approach for chirp and output power compensation applied to a 40-Gbit/s EADFB laser integrated with a short SOA
2015 · Wataru Kobayashi, Masakazu Arai, et al. · Optics Express · 41
GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform
2018 · Minami Akie, Takeshi Fujisawa, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 31
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Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage
1999 · Satoshi Shinada, Fumio Koyama, et al. · Japanese Journal of Applied Physics · 22
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High-Temperature Operation of 1.26-$\mu$m Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate
2009 · Masakazu Arai, Kiichi Nakashima, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 16
1.4 µm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy
2002 · Yoshihiko Ikenaga, Tomoyuki Miyamoto, et al. · Japanese Journal of Applied Physics · 16
High-Characteristic-Temperature 1.3-$\mu$m-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method
2007 · Masakazu Arai, Takao Watanabe, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 14
AlAs Oxidation System with H2O Vaporizer for Oxide-Confined Surface Emitting Lasers
2000 · Masakazu Arai, Nobuhiko Nishiyama, et al. · Japanese Journal of Applied Physics · 13
Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates
2008 · Takeshi Fujisawa, Masakazu Arai, et al. · Applied Physics Express · 12
Densely Integrated Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array
2003 · Akihiro Onomura, Masakazu Arai, et al. · Japanese Journal of Applied Physics · 12
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10-Gb/s 100-km SMF Transmission Using InP Mach–Zehnder Modulator Monolithically Integrated With Semiconductor Optical Amplifier
2008 · Takako Yasui, Yasuo Shibata, et al. · IEEE Photonics Technology Letters · 11
Low Threshold Current Density Operation of 1.16 µm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate
2002 · Takashi Kondo, Masakazu Arai, et al. · Japanese Journal of Applied Physics · 11
Full $C$-Band 10-Gb/s 40-km SMF Transmission of InGaAlAs Electroabsorption Modulator
2010 · Wataru Kobayashi, Naoki Fujiwara, et al. · Journal of Lightwave Technology · 10
Planar n-SI-n heterostructure athermal InP (110) optical modulator
2014 · Yoshihiro Ogiso, Yasuhiko Nakanishi, et al. · Optics Express · 9
Lossless 10-Gbit/s InP n-p-i-n Mach-Zehnder Modulator Monolithically Integrated with Semiconductor Optical Amplifier
2008 · Takako Yasui, Yasuo Shibata, et al. · Optical Fiber Communication Conference · 9
Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs (311)B Substrate under High-Speed Modulation
2000 · Masakazu Arai, Nobuhiko Nishiyama, et al. · Japanese Journal of Applied Physics · 9
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1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement
2015 · Ryo Nakao, Masakazu Arai, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 8
Enhanced High Laser Irradiation Tolerance in Single-Junction InGaAsP Laser Power Converters With 42% Conversion Efficiency
2025 · Sho Aonuki, Takaya Oshimo, et al. · IEEE Transactions on Electron Devices · 6
Theoretical and Experimental Investigation of the Incident-Power-Dependent Extinction Ratio of an Electroabsorption Modulator Integrated With a Distributed Feedback Laser
2010 · Takeshi Fujisawa, Takayuki Yamanaka, et al. · IEEE Journal of Quantum Electronics · 6
Extended Operating Temperature Range of 125 °C (−25°C to 100°C) of 10-Gbit/s, 1.55-µm Electroabsorption Modulator Integrated DFB Laser for 80-km SMF Transmission
2009 · Wataru Kobayashi, Masakazu Arai, et al. · Optical Fiber Communication Conference · 6
Micromachined GaAs/AlGaAs Resonant-Cavity Light Emitter with Small Temperature Dependence of Emission Wavelength
2003 · Takeru Amano, Fumio Koyama, et al. · Japanese Journal of Applied Physics · 6
Vertical-Cavity Surface-Emitting Laser Array on GaAs(311)B Substrate Exhibiting Single-Transverse Mode and Stable-Polarization Operation
2000 · Masakazu Arai, Nobuhiko Nishiyama, et al. · Japanese Journal of Applied Physics · 6
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Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
2000 · Fumio Koyama, Takeru Amano, et al. · Japanese Journal of Applied Physics · 6
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Mesh-shaped electrode thickness dependence of 1.06 μm range InGaAsP photovoltaic characteristics under high-intensity laser irradiation
2025 · Takaya Oshimo, Yuga Motomura, et al. · Japanese Journal of Applied Physics · 5
Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations
2009 · Takeshi Fujisawa, Masakazu Arai, et al. · Journal of Applied Physics · 5
10-Gbps Direct Modulation Using a 1.31-µm Ridge Waveguide Laser on an InGaAs Ternary Substrate
2009 · Masakazu Arai, Wataru Kobayashi, et al. · Applied Physics Express · 5
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Works count: 140
Citation count: 364
H-index: 11
I10-index: 12
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