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Jining Yang
Institution:
Fudan University
Observed institutions:
Fudan University,
State Key Laboratory of ASIC and System
ORCID:
0009-0006-3020-7696
Observed ORCID:
0009-0006-3020-7696
OpenAlex ID:
A5101257124
Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process
2024
·
Yinchi Liu
, Jining Yang
, et al.
·
ACS Applied Electronic Materials
·
7
PDF
A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination
2024
·
Xinlong Zhou
, Jining Yang
, et al.
·
Nanomaterials
·
7
Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer
2025
·
Yinchi Liu
, Xun Lu
, et al.
·
Science China Information Sciences
·
6
Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing
2025
·
Xinlong Zhou
, Jining Yang
, et al.
·
Semiconductor Science and Technology
·
6
Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage
2023
·
Hao He
, Xinlong Zhou
, et al.
·
Electronics
·
5
PDF
Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing
2024
·
Yinchi Liu
, Hao Zhang
, et al.
·
Chip
·
4
Si Doping in Amorphous GaO x Films via Plasma-Enhanced ALD for Dielectric and Optoelectronic Applications
2025
·
Yongjie He
, Jingxuan Wei
, et al.
·
IEEE Journal of the Electron Devices Society
·
1
Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation
2025
·
Yinchi Liu
, Handong Zhu
, et al.
·
Applied Physics Letters
·
1
2.4 kV β-Ga2O3 SBDs With 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment
2025
·
Yongjie He
, Maolin Pan
, et al.
·
IEEE Electron Device Letters
·
1
The effect of the IGZO inserting interlayer on the reduction in coercive voltages in ferroelectric domain wall devices
2026
·
Xiaoyang Yu
, Zilong Wang
, et al.
·
Europhysics Letters (EPL)
1.92 kV/5 A β -Ga 2 O 3 Schottky Barrier Diodes With Room-Temperature Sputtered Al 2 O 3 Field Plate
2026
·
Yeye Guo
, Hao Zhang
, et al.
·
IEEE Transactions on Electron Devices
A NiO/ β -Ga 2 O 3 Heterojunction Diode With Ultralow Turn-On Voltage via O 2 Plasma Treatment
2026
·
Hao Zhang
, Yinchi Liu
, et al.
·
IEEE Transactions on Electron Devices
β-Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally Cured Beveled Photoresist Field Plate
2026
·
Yongjie He
, Wenzheng Cheng
, et al.
·
IEEE Electron Device Letters
Improved Breakdown Voltage and Leakage Current in $\beta$Ga2O3 Schottky Barrier Diode Realized by N Ion-Implantation Edge Termination
2025
·
Hao Zhang
, Xinlong Zhou
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Toward Low-Thermal-Budget Processing and Low-Voltage Operating in Ferroelectric Stack Films by Introducing ZrO2 Middle Layer
2025
·
Yinchi Liu
, Hao Zhang
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Silicon Doping in Amorphous Gallium Oxide Films by Plasma-Enhanced Atomic Layer Deposition for Dielectric and Optoelectronic Applications
2025
·
Yongjie He
, Jingxuan Wei
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
A Fast Weight Control Strategy for Programmable Linear RAM Based on the Self-Calibrating Erase Operation
2023
·
Yanfei Li
, Yinchi Liu
, et al.
·
Electronics
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Works count:
17
Citation count:
38
H-index:
5
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