Author

Shammi Verma

Observed names: S Verma, S. Verma

Observed institutions: Jawaharlal Nehru University, Lund University, University of Mysore, Institute of Physics, Bhubaneshwar, Inter-University Accelerator Centre

ORCID: 0000-0003-4305-0262

Observed ORCID: 0000-0003-4305-0262

OpenAlex ID: A5101424757

Formation of nanodots on GaAs by 50 keV Ar+ ion irradiation

2011 · Tanuj Kumar, S.A. Khan, et al. · Applied Surface Science · 34

Role of surface composition in morphological evolution of GaAs nano-dots with low-energy ion irradiation

2012 · Tanuj Kumar, Manish Kumar, et al. · Nanoscale Research Letters · 33

Enhancement in electrical properties of Au/n-GaAs Schottky diodes exposed to 60Co gamma rays

2014 · A. Bobby, N. Shiwakoti, et al. · Materials Science in Semiconductor Processing · 31

Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques

2024 · Disha Yadav, Amit Krishna Dwivedi, et al. · Journal of Science Advanced Materials and Devices · 25

In Situ Investigation of Current Transport Across Pt/n-Si (100) Schottky Junction During 100 $\hbox{MeV Ni}^{+7}$ Ion Irradiation

2012 · Shammi Verma, Kumsi C. Praveen, et al. · IEEE Transactions on Device and Materials Reliability · 25

Role of ion beam induced solid flow in surface patterning of Si (1 0 0) using Ar ion beam irradiation

2013 · Tanuj Kumar, Ashish Kumar, et al. · Applied Surface Science · 21

Identification of swift heavy ion induced defects in Pt/n-GaN Schottky diodes by in-situ deep level transient spectroscopy

2018 · Ashish Kumar, Jyotsna Dhillon, et al. · Semiconductor Science and Technology · 19

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Frequency dependent negative capacitance effect and dielectric properties of swift heavy ion irradiated Ni/oxide/n-GaAs Schottky diode

2016 · A. Bobby, N. Shiwakoti, et al. · Physica B Condensed Matter · 15

Charge trapping and reliability characteristics of sputtered Y2O3high-kdielectrics on N- and S-passivated germanium

2009 · C Mahata, M K Bera, et al. · Semiconductor Science and Technology · 15

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Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

2013 · Asha Attri, Ajit Kumar, et al. · Nanoscale Research Letters · 14

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Fabrication of ordered ripple patterns on GaAs(100) surface using 60 keV Ar+ beam irradiation

2013 · T Kumar, M Kumar, et al. · Surface Engineering · 14

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

2015 · A. Bobby, N. Shiwakoti, et al. · Current Applied Physics · 13

Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under ${}^{60}\hbox{Co}$ Gamma Irradiation

2014 · Shammi Verma, Kumsi C. Praveen, et al. · IEEE Transactions on Device and Materials Reliability · 13

Phase transition induced double-Gaussian barrier height distribution in Schottky diode

2013 · A. Bobby, S. Verma, et al. · Physica B Condensed Matter · 13

In situinvestigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors

2013 · K. C. Praveen, N. Pushpa, et al. · Radiation effects and defects in solids · 6

In Situ Electrical Characteristics of 150 MeV Ag9+Ion Beam Induced Damage in Si Photo Detector

2016 · M. Vinay Kumar, Shammi Verma, et al. · ECS Journal of Solid State Science and Technology · 5

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In-Situ $I\hbox{--}V$ Measurements of ${\rm ZnS}{:}{\rm TiO}_{2}/{\rm p}\hbox{-}{\rm Si}$ Quantum Dot Heterojunction Photodiode Under 120 MeV ${\rm Au}^{9+}$ Ion Irradiation

2013 · Prabha Sana, Shammi Verma, et al. · IEEE Journal of Quantum Electronics · 5

100 MeV Si7+ Ion Irradiation Induced Modifications in Electrical Characteristics of Si Photo Detector: An In-Situ Reliability Study

2014 · M Vinay Kumar, Shammi Verma, et al. · Journal of Materials Science Research · 4

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Dependence of Schottky Barrier Height on Metal Work Function

2011 · Shammi Verma, D. Kabiraj, et al. · AIP conference proceedings · 4

High Field Electroluminescence Characteristics of Pr$^{3+}$-Doped ZnS/TiO$_{2}$

2014 · Prabha Sana, Shammi Verma, et al. · IEEE Transactions on Nanotechnology · 3

In Situ $I$ –$V$ Measurements of an Ultraviolet Enhanced $\hbox{ZnS:TiO}_{2}/\hbox{n-Si}$ Quantum Dot Heterojunction Photodiode Under 120 MeV $\hbox{Au}^{9+}$ Ions

2013 · Prabha Sana, Shammi Verma, et al. · IEEE Transactions on Device and Materials Reliability · 2

Effect of heavy ion irradiation on self-assembled Pr3+:ZnS/TiO2nanocrystals

2014 · Prabha Sana, Shammi Verma, et al. · Materials Research Express · 1

Nano structuring of GaAs(100) surface using low energy ion irradiation

2012 · Tanuj Kumar, S. A. Khan, et al. · AIP conference proceedings · 1

Nano Pattern on n-Si (100) Surface by Ion Irradiation

2011 · Tanuj Kumar, S. A. Khan, et al. · AIP conference proceedings · 1

Charge Trapping Characteristics of TaYOx Gate Dielectrics on Ge under DC and AC Stressing

2009 · Chandreswar Mahata, Milan K. Bera, et al. · ECS Transactions · 1

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Works count: 27

Citation count: 318

H-index: 13

I10-index: 14