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Feng Deng
Institution:
Kunming Institute of Physics
Observed institutions:
Nanchang University,
Kunming Institute of Physics
ORCID:
0000-0003-4013-6124
Observed ORCID:
0000-0003-4013-6124
OpenAlex ID:
A5101676954
Effect of hole blocking layer on V-pit hole injection and internal quantum efficiency in GaN-based yellow LED
2020
·
Feng Deng
, Zhi-Jue Quan
, et al.
·
Journal of Applied Physics
·
7
Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process
2024
·
Zeyang Meng
, Chaoyu Lu
, et al.
·
Scientific Reports
·
6
High-brightness 7-μm InGaN red Micro-LEDs via KOH sidewall repair and double-layer ITO electrodes
2026
·
Chunhang Yang
, Guanghua Wang
, et al.
·
Materials Science in Semiconductor Processing
High-Brightness Micro-LED Achieved by Controlled n-GaN Thinning via RIE
2026
·
Zeyang Meng
, Guanghua Wang
, et al.
·
ACS Applied Electronic Materials
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Works count:
4
Citation count:
13
H-index:
2
I10-index:
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