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Hye Su Kang

Observed names: H. Kang, H. S. Kang, H.-S. Kang, H.S. Kang
Observed institutions: SK Group (United States), Pohang University of Science and Technology, Korea University, Uiduk University, Samsung (South Korea), Kyungpook National University, Samsung Electronics (South Korea), Indian Institute of Science Bangalore
ORCID: 0009-0003-7610-3209
Observed ORCID: 0009-0003-7610-3209
OpenAlex ID: A5101768418
Oxidation-induced traps near SiO2/SiGe interface
1999 · C. G. Ahn, H. S. Kang, et al. · Journal of Applied Physics · 60
Humidity-dependent characteristics of thin film poly(3,4-ethylenedioxythiophene) field-effect transistor
2005 · H.S. Kang, H.-S. Kang, et al. · Synthetic Metals · 30
Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors
2014 · Sung Yoon Kim, Jae Hwa Seo, et al. · JSTS Journal of Semiconductor Technology and Science · 22
The new high voltage level up shifter for HVIC
2003 · J.J. Kim, M.H. Kim, et al. · IEEE Power Electronics Specialists Conference (PESC) · 14
Visualization of Transition Metal Decoration on h-BN Surface
2021 · Odongo Francis Ngome Okello, Kyung-Yeon Doh, et al. · Nano Letters · 13
Enhancing Electrochemical CO2 Reduction Activity via Charge Transfer and sp-Band Filling in a Au Thin Layer on Ag
2020 · Wen Guo, Kyubin Shim, et al. · ACS Applied Energy Materials · 11
Reactive sputtering of Al2O3 on AlGaN/GaN heterostructure field-effect transistor
2008 · J. Jhin, H. Kang, et al. · Thin Solid Films · 9
Enhanced Activity and Selectivity for Electrochemical CO2 Reduction through Water Activation by Oxophilic Metal Deposited on Ag
2023 · Noho Lee, Ho Yeon Jang, et al. · ACS Applied Energy Materials · 8
Time-dependent degradation due to negative bias temperature instability of p-MOSFET with an ultra-thin SiON gate dielectric
2005 · S.U. Han, H.S. Kang, et al. · Microelectronic Engineering · 8
Method for Measuring Deep Levels in Thin Silicon‐on‐Insulator Layer Without Any Interface Effects
1998 · H. S. Kang, C. G. Ahn, et al. · Journal of The Electrochemical Society · 5
Recovery of negative bias temperature instability induced degradation of p-MOSFETs with SiON gate dielectric
2008 · Y.D. Kim, S.U. Han, et al. · Microelectronic Engineering · 4
Extension of safe-operating-area by optimizing body-current in submicron LDMOS transistors
2002 · S.K. Lee, Y.C. Choi, et al. · Conference digest · 3
Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications
2014 · Young Jun Yoon, Jae Hwa Seo, et al. · International Conference on Measuring Technology and Mechatronics Automation (ICMTMA) · 2
Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
2008 · J.H. Do, H.S. Kang, et al. · Microelectronic Engineering · 2
Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen
1999 · B. K. Kang, H. S. Kang, et al. · Journal of The Electrochemical Society · 2
DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor
2016 · Hye Su Kang, Jae Hwa Seo, et al. · Journal of Electrical Engineering and Technology · 1
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Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET
2014 · Gwan Min Yoo, Jae Hwa Seo, et al. · IEEE International Symposium on Consumer Electronics (ISCE) · 1
Method of extracting effective channel length for nano-scale n-MOSFETs
2009 · H.W. Choi, N.H. Lee, et al. · Solid-State Electronics · 1
Cobalt Silicidation on Sub 100nm Hole Patterned Vertical Diode Formed by Silicon Epitaxial Growth and Its Electrical Properties
2008 · Min Yong Lee, K. B. Lee, et al. · MRS Proceedings · 1
Highly stable partial body tied SOI CMOS technology with Cu interconnect and low-k dielectric for high performance microprocessor
2002 · Y. W. Kim, C. B. Oh, et al. · IEEE International SOI Conference (SOI) · 1
A New Compact Isolation Structure in High Side Island Region of 600 V HVIC
2001 · S.L. Kim, C.K. Jeon, et al. · European Solid-State Device Research Conference · 1
High Performance Normally Off Nanochannel Al2O3/GaN FinFET
2012 · K. S. Im, K. W. Kim, et al. · International Conference on Solid State Devices and Materials (SSDM)
Fabrication of GaN MOSFET using Selectively Re-grown n+-GaN Layer on Etched Source and Drain Regions
2011 · D. S. Kim, H. S. Kang, et al. · International Conference on Solid State Devices and Materials (SSDM)
Effect of Etch Damage on Device performance in Trench-gate and Mesa-gate GaN Vertical MOSFET
2011 · K. W. Kim, S. D. Jung, et al. · International Conference on Solid State Devices and Materials (SSDM)
Highly Stable Partial Body Tied SO1 CMOS Technology with Cu Interconnect and Low-k Dielectric for High Performance Microprocessor
2002 · Y. W. Kim, H. S. Kang, et al.
Works count: 27
Citation count: 199
H-index: 8
I10-index: 6
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