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Author

Enlong Liu

Observed names: E. L. Liu, E. Liu, Liu, Enlong
Institution: Zhipu AI (China)
ORCID: 0000-0003-4381-2343
Observed ORCID: 0000-0003-4381-2343
OpenAlex ID: A5101835694
Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator
2019 · Yi Wang, Dapeng Zhu, et al. · Science · 242
SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories
2018 · K. Garello, F. Yasin, et al. · Symposium on VLSI Circuits · 223
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Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping
2017 · S. Couet, T. Devolder, et al. · Applied Physics Letters · 49
Electrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device
2024 · Mengqi Zhao, Aitian Chen, et al. · npj Quantum Materials · 37
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
2016 · E. Liu, J. Swerts, et al. · Applied Physics Letters · 37
Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks
2017 · J. Swerts, E. Liu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36
Synthetic-Ferromagnet Pinning Layers Enabling Top-Pinned Magnetic Tunnel Junctions for High-Density Embedded Magnetic Random-Access Memory
2018 · Enlong Liu, Y.-C. Wu, et al. · Physical Review Applied · 30
Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance
2016 · Y. Tomczak, J. Swerts, et al. · Applied Physics Letters · 25
Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers
2024 · Wenlong Yang, Zhenghui Ji, et al. · IEEE Electron Device Letters · 16
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Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy
2016 · T. Devolder, E. Liu, et al. · Applied Physics Letters · 16
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Composition dependence of spin–orbit torques in PtRh/ferromagnet heterostructures
2021 · Guoyi Shi, Enlong Liu, et al. · APL Materials · 14
Top-Pinned STT-MRAM Devices With High Thermal Stability Hybrid Free Layers for High-Density Memory Applications
2018 · Enlong Liu, Johan Swerts, et al. · IEEE Transactions on Magnetics · 14
Oxygen Scavenging by Ta Spacers in Double-MgO Free Layers for Perpendicular Spin-Transfer Torque Magnetic Random-Access Memory
2016 · Sebastien Couet, Johan Swerts, et al. · IEEE Magnetics Letters · 14
Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions
2018 · Y. C. Wu, W. Kim, et al. · Applied Physics Letters · 11
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Vertical Soliton-Assisted Current Switching in Extremely Thick FeGd Ferrimagnets
2025 · Teng Xu, Zhengde Xu, et al. · Physical Review Letters · 10
Optimization of Skyrmionic Magnetic Tunnel Junctions
2025 · Mengqi Zhao, Aitian Chen, et al. · Chinese Physics Letters · 10
A Novel Channel-Less SOT-MRAM with 115% TMR, 2 ns Switching, and High Bit Yield (>99.9%)
2024 · Enlong Liu, Wenlong Yang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Control of Interlayer Exchange Coupling and Its Impact on Spin–Torque Switching of Hybrid Free Layers With Perpendicular Magnetic Anisotropy
2017 · Enlong Liu, Adrien Vaysset, et al. · IEEE Transactions on Magnetics · 9
Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy
2017 · E. Liu, J. Swerts, et al. · IEEE International Magnetics Conference · 7
Influence of the Reference Layer Composition on the Back-End-of-Line Compatibility of Co/Ni-Based Perpendicular Magnetic Tunnel Junction Stacks
2016 · Yoann Tomczak, Tsann Lin, et al. · IEEE Transactions on Magnetics · 7
Area and Energy Efficient SOT-MRAM Bit Cell Based on 3 Transistors With Shared Diffusion Regions
2023 · Enlong Liu, Kunkun Li, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 6
Manufacturing-Friendly SOT-MTJ Device With High Reliability and Switching Efficiency
2025 · Lei Zhao, Shasha Wang, et al. · IEEE Electron Device Letters · 5
Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications
2017 · J. Swerts, S. Couet, et al. · IEEE International Magnetics Conference · 5
High TMR Over 156% in Perpendicular SOT-MRAM Realized With Channel Engineering
2025 · D. G. Zeng, Y. Gao, et al. · IEEE Electron Device Letters · 4
Quantifying the Impact of Arbitrary Magnetic Field Perturbation on the Write Error Rate of Spin-Orbit-Torque Random Access Memory
2025 · Xuejie Xie, Wenlong Yang, et al. · IEEE Transactions on Magnetics · 3
Works count: 40
Citation count: 848
H-index: 13
I10-index: 17
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