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Pengfei Guo

Observed names: P.F. Guo, Peng-Fei Guo, Pengfei GUO, Pengfei Guo -
ORCID: 0000-0001-8012-6938
Observed ORCID: 0000-0001-8012-6938
OpenAlex ID: A5101856088
Tunneling Field-Effect Transistor: Capacitance Components and Modeling
2010 · Yue Yang, Xin Tong, et al. · IEEE Electron Device Letters · 250
High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules
2011 · Genquan Han, Shaojian Su, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 86
Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
2012 · Yue Yang, Shaojian Su, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 66
Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration
2013 · Yue Yang, Genquan Han, et al. · IEEE Transactions on Electron Devices · 60
Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
2013 · Pengfei Guo, Genquan Han, et al. · Journal of Applied Physics · 46
Dopant Segregation and Nickel Stanogermanide Contact Formation on $\hbox{p}^{+} \hbox{Ge}_{0.947}\hbox{Sn}_{0.053}$ Source/Drain
2012 · Genquan Han, Shaojian Su, et al. · IEEE Electron Device Letters · 40
Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer
2012 · Genquan Han, Shaojian Su, et al. · Symposium on VLSI Technology · 35
Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs
2014 · Eugene Y.-J. Kong, Pengfei Guo, et al. · IEEE Transactions on Electron Devices · 32
Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure
2011 · Genquan Han, Pengfei Guo, et al. · Japanese Journal of Applied Physics · 26
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MA-GRNN:a high-efficient modeling attack approach utilizing generalized regression neural network for XOR arbiter physical unclonable functions
2023 · Yanjiang Liu, Gaofeng Huang, et al. · IEICE Electronics Express · 24
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Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain
2013 · Bin Liu, Chunlei Zhan, et al. · IEEE Transactions on Electron Devices · 20
Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal
2012 · Lanxiang Wang, Shaojian Su, et al. · IEEE Electron Device Letters · 18
Enhancement of TFET performance using dopant profile-steepening implant and source dopant concentration engineering at tunneling junction
2010 · Genquan Han, Ye Sheng Yee, et al. · Silicon Nanoelectronics Workshop (SNW) · 16
Investigation on wafer warpage evolution and wafer asymmetric deformation in fan-out wafer level packaging processes
2017 · Chunsheng Zhu, Pengfei Guo, et al. · International Conference on Electronic Packaging Technology (ICEPT) · 10
R/B-SecArch: A strong isolated SoC architecture based on red/black concept for secure and efficient cryptographic services
2023 · Pengfei Guo, Yingjian Yan, et al. · Microelectronics Journal · 8
Extending the classical side-channel analysis framework to access-driven cache attacks
2023 · Pengfei Guo, Yingjian Yan, et al. · Computers & Security · 8
Template Attack of LWE/LWR-Based Schemes with Cyclic Message Rotation
2022 · Yajing Chang, Yingjian Yan, et al. · Entropy · 8
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PBTI characteristics of N-channel tunneling field effect transistor with HfO2 gate dielectric: New insights and physical model
2012 · Genquan Han, Yue Yang, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 8
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
2012 · Lanxiang Wang, Genquan Han, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 6
Research on Arm TrustZone and Understanding the Security Vulnerability in Its Cache Architecture
2021 · Pengfei Guo, Yingjian Yan, et al. · Lecture notes in computer science · 5
Leveraging 3D Packaging Technology to Enhance Integrated Circuits Security and Reliability
2018 · Chunsheng Zhu, Yingjian Yan, et al. · International Conference on Electronic Packaging Technology (ICEPT) · 5
Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
2013 · Eugene Kong, Xiao Gong, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 5
Towards a metrics suite for evaluating cache side-channel vulnerability: Case studies on an open-source RISC-V processor
2023 · Pengfei Guo, Yingjian Yan, et al. · Computers & Security · 4
A novel silicon interposer based high security integration approach for microsystem
2021 · Chunsheng Zhu, Pengfei Guo, et al. · Microelectronics Journal · 4
(Invited) Tin-Incorporated Source/Drain and Channel Materials for Field-Effect Transistors
2013 · Y. C. Yeo, Genquan Han, et al. · ECS Transactions · 4
Works count: 49
Citation count: 814
H-index: 13
I10-index: 14
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