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Ryota Maeda

Observed name: R. Maeda
ORCID: 0009-0003-9715-7855
Observed ORCID: 0009-0003-9715-7855
OpenAlex ID: A5101920173
AlN/Al 0.5 Ga 0.5 N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering
2022 · Ryota Maeda, Kohei Ueno, et al. · Applied Physics Express · 38
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Degenerate GaN source–drain AlN/Al x Ga1− x N/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
2025 · Kohei Ueno, Ryota Maeda, et al. · APL Materials · 13
Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications
2023 · Ryota Maeda, Kohei Ueno, et al. · Applied Physics Express · 10
Pulsed Sputtering Epitaxy of Coherent AlN/Al0.5Ga0.5N/AlN Multichannel Structures
2024 · Takao Kozaka, Ryota Maeda, et al. · physica status solidi (RRL) - Rapid Research Letters · 2
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Engineering of Novel Ultrawide-bandgap Nitride Semiconductors
2026 · Ryota Maeda, Yoshitaka Taniyasu, et al. · NTT technical review · 1
Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
2024 · Ryota Maeda, Kohei Ueno, et al. · physica status solidi (a) · 1
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Al-rich AlGaN multichannel transistors with degenerate semiconductor electrodes
2026 · Hiroshi Fujioka, Takao Kozaka, et al. · Research Square
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Epitaxial growth of NbN on atomically flat AlN surfaces
2021 · Shunya Kihira, R. Maeda, et al. · The Japan Society of Applied Physics
Fabrication of AlN/AlGaN HEMTs with n + -GaN regrowth ohmic contacts by sputtering
2021 · R. Maeda, Kohei Ueno, et al. · The Japan Society of Applied Physics
Growth of coherent AlN/AlGaN heterostructures and its application to transistors
2021 · R. Maeda, Kohei Ueno, et al. · The Japan Society of Applied Physics
Works count: 10
Citation count: 65
H-index: 3
I10-index: 3
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