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Cimang Lu

Observed names: C. Lu, C.T. Lu, Chen-Kai Lu
ORCID: 0000-0001-5515-032X
Observed ORCID: 0000-0001-5515-032X
OpenAlex ID: A5102017059
Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium
2014 · Cimang Lu, Choong Hyun Lee, et al. · Journal of Applied Physics · 45
Enhancement of thermal stability and water resistance in yttrium-doped GeO 2 /Ge gate stack
2014 · Cimang Lu, Choong Hyun Lee, et al. · Applied Physics Letters · 39
Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge
2013 · C. H. Lee, C. Lu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 35
Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation
2015 · Cimang Lu, Choong Hyun Lee, et al. · Applied Physics Letters · 31
Enhancement of high-N s electron mobility in sub-nm EOT Ge n-MOSFETs
2013 · C. H. Lee, Cimang Lu, et al. · Symposium on VLSI Technology · 18
Dramatic effects of hydrogen-induced out-diffusion of oxygen from Ge surface on junction leakage as well as electron mobility in n-channel Ge MOSFETs
2014 · Choong Hyun Lee, Tomonori Nishimura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Design and demonstration of reliability-aware Ge gate stacks with 0.5 nm EOT
2015 · C. Lu, C. H. Lee, et al. · Symposium on VLSI Technology · 15
Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate
2014 · C. H. Lee, C. Lu, et al. · Symposium on VLSI Technology · 15
Reconsideration of electron mobility in Ge n-MOSFETs from Ge substrate side — Atomically flat surface formation, layer-by-layer oxidation, and dissolved oxygen extraction
2013 · C. H. Lee, T. Nishimura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Fast Algorithms for Exact IR Drop De-Embedding in Analog Multiply–Accumulate Computing
2022 · Shifan Gao, Fan Yang, et al. · IEEE Transactions on Electron Devices · 13
Rigidity Enhancement of GeO2 by Y-Doping for Reliable Ge Gate Stacks
2018 · Tomonori Nishimura, Xiaoyu Tang, et al. · IEEE Journal of the Electron Devices Society · 11
Reliability assessment of germanium gate stacks with promising initial characteristics
2015 · Cimang Lu, Choong Hyun Lee, et al. · Applied Physics Express · 11
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Structural coordination of rigidity with flexibility in gate dielectric films for sub-nm EOT Ge gate stack reliability
2015 · Cimang Lu, Akira Toriumi · Technical digest - International Electron Devices Meeting/Technical digest · 7
UL-CNN: An Ultra-Lightweight Convolutional Neural Network Aiming at Flash-Based Computing-In-Memory Architecture for Pedestrian Recognition
2020 · Chen Yang, Jingyu Zhang, et al. · Journal of Circuits Systems and Computers · 4
Design Strategies of S8 Molecule Cathodes for Room-Temperature Na-S Batteries
2025 · Sha-Sha Shi, Zi-Qi Cai, et al. · Nanomaterials · 3
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Edge Artificial Intelligence for Electrical Anomaly Detection Based on Process-In-Memory Chip
2024 · Jianzi Jin, Xiang Qiu, et al. · Electronics · 3
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(Invited) Significant Enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface
2014 · Choonghyun Lee, Tomonori Nishimura, et al. · ECS Transactions · 3
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Mitigating RC-Delay Induced Accuracy Loss in Analog In-Memory Computing: A Non-Compromising Approach
2024 · Saike Zhu, Cimang Lu, et al. · IEEE Transactions on Consumer Electronics · 2
(Invited) High Electron Mobility n-Channel Ge MOSFETs with Sub-Nm EOT
2014 · Akira Toriumi, Choonghyun Lee, et al. · ECS Transactions · 2
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Improving Processing-In-Memory Chip Inferencing Accuracy Through Noise-Aware Training
2025 · Youngseo Kim, Cimang Lu, et al. · World Conference on Computing and Communication Technologies (WCCCT) · 1
Enhancing Computational Precision in PLRAM-based In-memory Computing with High-Low Bit Concatenation
2024 · Saike Zhu, Xiang Qiu, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
POSS-CNN: An Automatically Generated Convolutional Neural Network with Precision and Operation Separable Structure Aiming at Target Recognition and Detection
2023 · Jia Hou, Jingyu Zhang, et al. · Information
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Stabilization of amorphous GeO 2 network by Y doping
2018 · Tomonori Nishimura, Xiaoyu Tang, et al. · The Japan Society of Applied Physics
How to secure both sufficient passivation and long term reliability in Ge gate stack -The key is to keep a proper network structure of oxides-
2015 · Cimang Lu · The Japan Society of Applied Physics
[Young Scientist Presentation Award Speech] Interface-aware high-k dielectric designing for deep sub-nm EOT Ge gate stack
2015 · Cimang Lu · The Japan Society of Applied Physics
Works count: 32
Citation count: 288
H-index: 11
I10-index: 12
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