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Author

Guoshun Pan

Observed names: G S Pan, G. S. Pan, G.S. Pan, GuoShun Pan
ORCID: 0000-0003-4667-7191
Observed ORCIDs: 0000-0003-4667-7191, 0000-0003-1190-9677
OpenAlex ID: A5102018375
Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry
2014 · Yan Zhou, Guoshun Pan, et al. · Surface and Coatings Technology · 139
XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)
2014 · Yan Zhou, Guoshun Pan, et al. · Applied Surface Science · 136
Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
2015 · Yan Zhou, Guoshun Pan, et al. · Tribology International · 115
Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001)
2014 · Xiaolei Shi, Guoshun Pan, et al. · Applied Surface Science · 107
Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate
2010 · Wenhu Xu, Xinchun Lu, et al. · Applied Surface Science · 97
Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface
2013 · Guoshun Pan, Yan Zhou, et al. · Journal of Materials Science Materials in Electronics · 89
A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing
2015 · Xiaolei Shi, Guoshun Pan, et al. · Surface and Coatings Technology · 87
A comparative study between graphene oxide and diamond nanoparticles as water-based lubricating additives
2012 · YuHong Liu, XiaoKang Wang, et al. · Science China Technological Sciences · 81
Femtosecond laser modification of silicon carbide substrates and its influence on CMP process
2021 · Xiaozhu Xie, Qingfa Peng, et al. · Ceramics International · 80
Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face
2020 · Gaopan Chen, Jianguo Li, et al. · Applied Surface Science · 80
Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry
2016 · Xiaolei Shi, Chunli Zou, et al. · Tribology International · 74
Film Thickness of Ionic Liquids Under High Contact Pressures as a Function of Alkyl Chain Length
2010 · Huaping Xiao, Dan Guo, et al. · Tribology Letters · 74
Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles; pad and sapphire substrate during chemical mechanical polishing (CMP)
2010 · Wenhu Xu, Xinchun Lu, et al. · Applied Surface Science · 74
Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms
2016 · Yan Zhou, Guoshun Pan, et al. · Colloids and Surfaces A Physicochemical and Engineering Aspects · 70
Preparation of silane modified SiO2 abrasive particles and their Chemical Mechanical Polishing (CMP) performances
2011 · GuoShun Pan, ZhongHua Gu, et al. · Wear · 68
Effect of photocatalytic oxidation technology on GaN CMP
2015 · Jie Wang, Tongqing Wang, et al. · Applied Surface Science · 64
A modified decal method for preparing the membrane electrode assembly of proton exchange membrane fuel cells
2014 · Xiaolu Liang, Guoshun Pan, et al. · Fuel · 62
Mechanical model of nanoparticles for material removal in chemical mechanical polishing process
2016 · Hao Chen, Dan Guo, et al. · Friction · 60
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Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization
2013 · Xiaolei Shi, Guoshun Pan, et al. · Applied Surface Science · 58
Achieving ultralow surface roughness and high material removal rate in fused silica via a novel acid SiO2 slurry and its chemical-mechanical polishing mechanism
2019 · Xiao-Lei Shi, Gaopan Chen, et al. · Applied Surface Science · 57
Fe-Nx/C assisted chemical–mechanical polishing for improving the removal rate of sapphire
2015 · Li Xu, Chunli Zou, et al. · Applied Surface Science · 56
Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing
2015 · Hua Gong, Guoshun Pan, et al. · Applied Surface Science · 56
Mechanism of GaN CMP Based on H2O2Slurry Combined with UV Light
2015 · Jie Wang, Tongqing Wang, et al. · ECS Journal of Solid State Science and Technology · 51
Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots
2021 · Jiangyou Long, Qingfa Peng, et al. · Ceramics International · 49
Atomic scale deformation in the solid surface induced by nanoparticle impacts
2005 · J Xu, J B Luo, et al. · Nanotechnology · 47
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Works count: 89
Citation count: 2,776
H-index: 33
I10-index: 55
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