Author

Yawei He

Observed name: Ya-Wei He

Institutions: Multimedia University, State Grid Corporation of China (China), Anhui Business College

Observed institutions: Zhejiang University of Science and Technology, Multimedia University, State Grid Corporation of China (China), Chinese Academy of Sciences, Anhui Business College, Institute of Semiconductors, University of Chinese Academy of Sciences

ORCID: 0009-0002-6052-751X

Observed ORCID: 0009-0002-6052-751X

OpenAlex ID: A5102437445

Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz

2023 · Yawei He, Lian Zhang, et al. · IEEE Transactions on Electron Devices · 27

Optimization of selective-area regrown n-GaN via MOCVD for high-frequency HEMT

2021 · Lian Zhang, Zhe Cheng, et al. · Applied Physics Letters · 27

Bimetallic Ni and Pt single atoms anchored on nitrogen–phosphorus doped porous carbon fibers to achieve significant electrocatalytic hydrogen evolution

2024 · Xiaoqing Wang, Yawei He, et al. · Separation and Purification Technology · 13

Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension*

2019 · Zheng-Xin Wen, Feng Zhang, et al. · Chinese Physics B · 12

Busy independent directors and IPO company earnings management: Evidence from China

2024 · Yawei He, Sunita Lylia Hamdan, et al. · Heliyon · 11

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network

2024 · Xiping Niu, Ling Sang, et al. · Micromachines · 7

GaN surface acoustic wave filter with low insertion loss

2023 · Yujie Ai, Hongrui Lv, et al. · Ultrasonics · 6

Single Event Effect on SiC MOSFETs With Junction Barrier Schottky Diode Structures

2025 · Xinyu Li, Feng He, et al. · IEEE Transactions on Nuclear Science · 3

Short-Circuit Characteristic Analysis of SiC Trench MOSFETs with Dual Integrated Schottky Barrier Diodes

2025 · Ling Sang, Xiping Niu, et al. · Electronics · 2

Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling

2019 · Yawei He, Guoguo Yan, et al. · Journal of Crystal Growth · 2

Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy

2019 · Yawei He, Guoguo Yan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) · 2

The impact of busy independent directors on the post-IPO operating performance of Chinese companies

2025 · Ya-Wei He, Sunita Lylia Hamdan, et al. · Cogent Business & Management · 1

Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances

2024 · Xinyu Li, Feng He, et al. · Electronics · 1

Optimization of JFET Doping in the Fabrication of 4H-SiC MOSFETs

2024 · Hao Liu, Ling Sang, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) · 1

Knowledge Mapping of Board Governance Research: A Visual Analysis Using CiteSpace

2023 · Yawei He, Sunita Lylia Hamdan, et al. · International Journal of Management Finance and Accounting · 1

Study of Poly-Si Gate Annealing on the Electrical Characteristics of 1200 V 4H-SiC MOSFETs

2023 · Ling Sang, Yawei He, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

Study on Sludge Treatment Method and Development Direction

2018 · Yawei He · DEStech Transactions on Engineering and Technology Research

Works count: 17

Citation count: 116

H-index: 6

I10-index: 5