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Guangyuan Jiang

ORCID: 0000-0002-6546-9673
Observed ORCID: 0000-0002-6546-9673
OpenAlex ID: A5102750933
Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors
2020 · Guangyuan Jiang, Yuanjie Lv, et al. · AIP Advances · 25
The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
2021 · Guangyuan Jiang, Yuanjie Lv, et al. · Superlattices and Microstructures · 20
A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
2021 · Yang Liu, Yuanjie Lv, et al. · Scientific Reports · 16
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The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
2020 · Guangyuan Jiang, Yuanjie Lv, et al. · Physica E Low-dimensional Systems and Nanostructures · 14
Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
2022 · Guangyuan Jiang, Peng Cui, et al. · Solid-State Electronics · 9
A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications
2022 · Yang Liu, Yuanjie Lv, et al. · Micro and Nanostructures · 7
A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate
2022 · Yang Liu, Yuanjie Lv, et al. · AIP Advances · 6
Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron -mobility transistors
2022 · Guangyuan Jiang, Peng Cui, et al. · Microelectronics Journal · 5
Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs
2022 · Yan Liu, Simin Chen, et al. · Micro and Nanostructures · 5
Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures
2021 · Yan Liu, Simin Chen, et al. · Microelectronic Engineering · 4
Influence of LPCVD-Si3N4 Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors
2025 · Guangyuan Jiang, Weikang Li, et al. · Micromachines · 3
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Influence of Polarization Coulomb Field Scattering on the Sub-60 mV/dec Switching of AlGaN/GaN HFETs
2021 · Yongxiong Yang, Zhaojun Lin, et al. · IEEE Transactions on Electron Devices · 3
A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors
2024 · Guangyuan Jiang, Chen Fu, et al. · Solid-State Electronics · 2
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length
2021 · Guangyuan Jiang, Yuanjie Lv, et al. · Solid-State Electronics · 2
The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors
2021 · Guangyuan Jiang, Yan Liu, et al. · Applied Physics A · 2
Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors
2024 · Guangyuan Jiang, Peng Cui, et al. · Micromachines · 1
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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors
2023 · Yang Liu, Chen Fu, et al. · Journal of Applied Physics · 1
Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics
2020 · Yongxiong Yang, Yuanjie Lv, et al. · Electronics · 1
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A physics-based modeling approach for polarization Coulomb field scattering in tri-gate AlGaN/GaN MIS-HEMTs
2026 · Weikang Li, Yang Liu, et al. · Journal of Alloys and Compounds
The Influence of Gap Angle on the Transport Characteristics of Split-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
2026 · Ying Kang, Xiaojia Zhang, et al. · Micromachines
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Influence of gate dielectric relative permittivity on polarization Coulomb field scattering in AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors
2026 · Qingying Zhang, Weikang Li, et al. · Journal of Applied Physics
Influence of ALD-Al 2 O 3 gate dielectric thickness on polarization and barrier strain under gate bias in AlGaN/GaN MIS-HEMTs
2026 · Weikang Li, Guangyuan Jiang, et al. · Physica Scripta
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A novel method to determine the conduction channel effective width of split-gate AlGaN/GaN high electron mobility transistors
2025 · Yang Liu, Ying Kang, et al. · AIP Advances
Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method
2021 · Yongxiong Yang, Zhaojun Lin, et al. · AIP Advances
Works count: 24
Citation count: 126
H-index: 6
I10-index: 4
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