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Sanghyuk Yun
Institution:
Kookmin University
Observed institution:
Kookmin University
ORCID:
0009-0006-2700-4927
Observed ORCID:
0009-0006-2700-4927
OpenAlex ID:
A5102881970
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell
2024
·
Seongwon Lee
, Haesung Kim
, et al.
·
IEEE Electron Device Letters
·
12
Exploration of structural influences on the ferroelectric switching characteristics of ferroelectric thin-film transistors
2024
·
Hyojin Yang
, Sejun Park
, et al.
·
Nanoscale
·
12
Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
2024
·
Haesung Kim
, Hyojin Yang
, et al.
·
Applied Physics Letters
·
6
Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in Hf x Zr 1‐x O 2 /SiO 2 Interface in Ferroelectric Field‐Effect‐Transistor
2025
·
Haneul Lee
, Sujong Kim
, et al.
·
Advanced Electronic Materials
·
3
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Works count:
4
Citation count:
33
H-index:
3
I10-index:
2
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