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Niladri Bhattacharjee
Observed names:
Bhattacharjee, Niladri,
N. Bhattacharjee
Institutions:
GlobalFoundries (United States),
GlobalFoundries (Germany)
Observed institutions:
GlobalFoundries (United States),
Ernst Abbe University of Applied Sciences Jena,
NaMLab (Germany),
GlobalFoundries (Germany)
ORCID:
0000-0003-2730-8307
Observed ORCID:
0000-0003-2730-8307
OpenAlex ID:
A5102907857
Reconfigurable field effect transistors: A technology enablers perspective
2022
·
T. Mikolajick
, G. Galderisi
, et al.
·
Solid-State Electronics
·
108
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
2022
·
Maik Simon
, Halid Mulaosmanovic
, et al.
·
Nature Communications
·
62
PDF
Machine Learning-Based Compact Model Design for Reconfigurable FETs
2024
·
Maximilian Reuter
, Johannes Wilm
, et al.
·
IEEE Journal of the Electron Devices Society
·
23
PDF
Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI
2025
·
N. Bhattacharjee
, Y. He
, et al.
·
IEEE Electron Device Letters
·
22
Dynamic Reconfigurable Security Cells Based on Emerging Devices Integrable in FDSOI Technology
2024
·
Niladri Bhattacharjee
, Viktor Havel
, et al.
·
Design, Automation, and Test in Europe
·
16
Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates
2024
·
Christoph Beyer
, Niladri Bhattacharjee
, et al.
·
Advanced Materials Technologies
·
12
Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices
2023
·
Niladri Bhattacharjee
, Maximilian Reuter
, et al.
·
IEEE Interregional NEWCAS Conference (NEWCAS)
·
12
Verilog-A Look-Up Table Model of a TIG-RFET Compatible with 22 nm FDSOI Design Rules Satisfying Gummel Symmetry
2025
·
Juan P. Martinez
, Niladri Bhattacharjee
, et al.
·
International Conference on Modern Circuits and Systems Technologies
·
7
Speeding-Up Emerging Device Development Cycles by Generating Models via Machine-Learning directly from Electrical Measurements
2024
·
J. Trommer
, M. Reuter
, et al.
·
7
Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI
2025
·
N. Bhattacharjee
, G. Galderisi
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
6
Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors
2023
·
J. Trommer
, N. Bhattacharjee
, et al.
·
Design, Automation, and Test in Europe
·
6
Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded Security
2026
·
Yuxuan He
, Aniruddh Holemadlu
, et al.
·
IEEE Journal of the Electron Devices Society
·
4
Generating Predictive Models for Emerging Semiconductor Devices
2024
·
Maximilian Reuter
, Andreas Kramer
, et al.
·
IEEE Journal of the Electron Devices Society
·
4
PDF
A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware
2026
·
Juan P. Martinez
, Yuxuan He
, et al.
·
Advanced Electronic Materials
·
2
A Low-Power 2-bit Full Adder realized with Three-Independent-Gate Reconfigurable FETs
2026
·
Giulio Galderisi
, Yuxuan He
, et al.
·
IEEE International Symposium on Circuits and Systems proceedings
·
1
Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI
2026
·
Juan P. Martinez
, Niladri Bhattacharjee
, et al.
·
Advanced Electronic Materials
·
1
Design and Evaluation of an RFET Standard Cell Library Compatible With 22-nm FDSOI
2025
·
Nima Kavand
, Armin Darjani
, et al.
·
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
·
1
Thermal noise of hot carriers under natural sunlight
2022
·
Igor Konovalov
, Niladri Bhattacharjee
·
Solar Energy
·
1
Reliability Characterization of BOXFET Devices with Emphasis on Temperature Dependence
2026
·
IEEE International Symposium on Reliability Physics 2026
, Arfaoui, Wafa
, et al.
·
Underline Science Inc.
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Works count:
21
Citation count:
298
H-index:
7
I10-index:
7
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