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Beom Yong Kim

Observed name: Kim, Beom Yong
ORCID: 0000-0002-9191-3424
Observed ORCIDs: 0000-0002-9191-3424, 0000-0001-6771-4428
OpenAlex ID: A5102921457
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
2020 · Baek Su Kim, Seung Dam Hyun, et al. · Nanoscale Research Letters · 69
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Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell
2015 · Tae Hyung Park, Seul Ji Song, et al. · Scientific Reports · 69
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Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer
2020 · Hyeon Woo Park, Seung Dam Hyun, et al. · Nanoscale · 61
Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer
2021 · Beom Yong Kim, Hyeon Woo Park, et al. · Advanced Electronic Materials · 57
Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory
2020 · Seung Dam Hyun, Hyeon Woo Park, et al. · Advanced Electronic Materials · 49
NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application
2014 · Wan Gee Kim, Hyun Min Lee, et al. · Symposium on VLSI Technology · 38
Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes
2020 · Beom Yong Kim, Baek Su Kim, et al. · Applied Physics Letters · 36
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film
2022 · Yong Bin Lee, Beom Yong Kim, et al. · Advanced Electronic Materials · 33
Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors
2023 · Beom Yong Kim, In Soo Lee, et al. · Advanced Materials Technologies · 25
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Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM
2015 · Soo Gil Kim, Tae Jung Ha, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Thickness‐dependent electroforming behavior of ultra‐thin Ta2O5resistance switching layer
2015 · Tae Hyung Park, Seul Ji Song, et al. · physica status solidi (RRL) - Rapid Research Letters · 21
Unipolar resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO2/Si substrate
2014 · Tae-Geun Seong, Beom-Seok Lee, et al. · Current Applied Physics · 13
Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3‐Hf0.5Zr0.5O2‐Al2O3 Triple‐Layer Structure
2022 · Hyeon Woo Park, Minsik Oh, et al. · Advanced Functional Materials · 12
Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer
2021 · Beom Yong Kim, Se Hyun Kim, et al. · Applied Physics Letters · 12
Low power switching of Si-doped Ta 2 O 5 resistive random access memory for high density memory application
2016 · Beom Yong Kim, Kee Jeung Lee, et al. · Japanese Journal of Applied Physics · 12
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Atomic layer deposition of HfN x films and improving the film performance by annealing under NH 3 atmosphere
2022 · Seung Kyu Ryoo, Beom Yong Kim, et al. · Journal of Materials Chemistry C · 8
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Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film (Adv. Electron. Mater. 11/2022)
2022 · Yong Bin Lee, Beom Yong Kim, et al. · Advanced Electronic Materials · 2
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Advanced process technologies of 1S1R for high density cross point ReRAM
2015 · Beom Yong Kim, Hyeong Soo Kim · IEEE Silicon Nanoelectronics Workshop · 1
Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors (Adv. Mater. Technol. 16/2023)
2023 · Beom Yong Kim, In Soo Lee, et al. · Advanced Materials Technologies
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Works count: 21
Citation count: 539
H-index: 12
I10-index: 15
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