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Lixing Zhou

Observed names: Zhou Lixing, 周立幸
ORCID: 0000-0002-5472-0682
Observed ORCIDs: 0000-0002-5472-0682, 0000-0002-4955-8705
OpenAlex ID: A5102944807
An adiabatic low-temperature calorimeter for heat capacity measurement of small samples
1995 · Zhicheng Tan, Guanyu Sun, et al. · Journal of Thermal Analysis and Calorimetry · 148
First-principles study of oxygen vacancy defects in orthorhombic Hf0.5Zr0.5O2/SiO2/Si gate stack
2022 · Junshuai Chai, Hao Xu, et al. · Journal of Applied Physics · 24
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Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
2022 · Shijie Pan, Shiwei Feng, et al. · Applied Physics Letters · 15
Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method
2023 · Yilin Li, Hui Zhu, et al. · Applied Physics Letters · 9
An adiabatic calorimeter for heat capacity measurements in the temperature range 300–600 K and pressure range 0.1–15 MPa
1991 · Tan Zhi-Cheng, Ye Jinchun, et al. · Thermochimica Acta · 9
Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
2024 · Yiqun Zhang, Hui Zhu, et al. · Applied Physics Letters · 8
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
2021 · Shijie Pan, Shiwei Feng, et al. · Semiconductor Science and Technology · 8
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An automated adiabatic calorimeter for heat-capacity measurements between 20 and 90 K
1988 · Tan Zhicheng, Yin Anxue, et al. · Thermochimica Acta · 8
Experimental investigation on dipole and band offset affected by charge neutrality level modulation
2022 · Lixing Zhou, Jinjuan Xiang, et al. · Applied Physics A · 6
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
2022 · Shijie Pan, Shiwei Feng, et al. · Semiconductor Science and Technology · 6
Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation
2023 · Lixing Zhou, Jialu Cui, et al. · Journal of Materials Science Materials in Electronics · 4
Study of traps in low-temperature polysilicon thin film transistors using a current transient method
2021 · Hui Zhu, Na Xie, et al. · Semiconductor Science and Technology · 4
Experimental investigation of dipole formation and modulation at Hf0.5Zr0.5O2/SiO2 interface
2024 · Manru Gong, Lixing Zhou, et al. · Physica Scripta · 2
Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field
2022 · Yilin Li, Hui Zhu, et al. · Chinese Physics B · 2
Investigation on the dipole distribution at ferroelectric/dielectric interface
2025 · Manru Gong, Lixing Zhou, et al. · Physica Scripta · 1
The identification of traps in HfO2-based FeFET with SiON as an interlayer using current transient method
2024 · Lixing Zhou, Jialu Cui, et al. · Semiconductor Science and Technology · 1
Transient temperature measurement of silicon carbide Schottky barrier diode based on thermal reflection
2024 · Jingxuan Wang, Lixing Zhou, et al. · Review of Scientific Instruments · 1
AN ADIABATIC CALORIMETER FOR HEAT- CAPACITY MEASUREMENTS FROM 80 TO 400K——HEAT CAPACITIES OF a-ALUMINA AND n-HEPTANE
1983 · Zhi‐Cheng Tan, Lixing Zhou, et al. · Science China Chemistry · 1
Polarity Reversal of Dipole at the SiO2/HZO Interface in Ferroelectric Field-Effect Transistors by Oxygen Scavenging of TiN
2026 · Manru Gong, Lixing Zhou, et al. · ACS Applied Electronic Materials
Study on RAWD in HfZrO ferroelectric FeFETs with a thin HfO 2 insertion at HfZrO/SiO 2 interface
2026 · Cong Dai, Lixing Zhou, et al. · Journal of Physics Conference Series
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Study of Transient Current Dependent on Different Traps in HfZrO FeFET with Thin HfO 2 Insertion
2026 · Lixing Zhou, Cong Dai, et al. · ECS Journal of Solid State Science and Technology
Polarity reversal of dipole at the SiO2/HZO interface in FeFETs by oxygen scavenging of TiN
2026 · Manru Gong, Lixing Zhou, et al. · SSRN Electronic Journal
Investigation of Traps Evolution in HfO 2 -Based FeFET During Cycling: Measurement and Analysis of Time Constant, Energy Level, and Trap Density
2026 · Congshan Hu, Hui Zhu, et al. · IEEE Transactions on Instrumentation and Measurement
Photothermal Coupling Characteristics Analysis of Red and Blue Lasers
2025 · Xinyu Zhang, Lixing Zhou, et al. · International Conference on Electronic Engineering and Informatics (EEI)
Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage
2023 · Shijie Pan, Lixing Zhou, et al. · Journal of Physics Conference Series
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Works count: 31
Citation count: 257
H-index: 8
I10-index: 3
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