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Dipankar Biswas

Observed name: D. Biswas
ORCID: 0000-0002-6477-4094
Observed ORCID: 0000-0002-6477-4094
OpenAlex ID: A5103117032
Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
1990 · D. Biswas, N. Debbar, et al. · Applied Physics Letters · 145
Calculations for the band lineup of strained InxGa1−xN/GaN quantum wells: Effects of strain on the band offsets
2009 · Tapas Das, Sanjib Kabi, et al. · Journal of Applied Physics · 25
Band offsets of InXGa1−XN/GaN quantum wells reestimated
2006 · Dipankar Biswas, Subindu Kumar, et al. · Thin Solid Films · 22
Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output
2017 · Anup Gorai, Siddhartha Panda, et al. · Optik · 20
Constructive and comprehensive studies on the advantages of using staggered In x Ga 1-x N/In y Ga 1-y N QWs in LEDs
2017 · Dipankar Biswas, Apu Mistry, et al. · Optical Materials · 20
Effects of doping concentration on the transition energy of InGaN/GaN quantum well diodes
2013 · Siddhartha Panda, Dipankar Biswas · Solid State Communications · 18
Tunability of InGaN/GaN quantum well light emitting diodes through current
2013 · Dipankar Biswas, Siddhartha Panda · Journal of Applied Physics · 15
Interdiffusion induced changes in the photoluminescence of InXGa1−XAs∕GaAs quantum dots interpreted
2007 · Dipankar Biswas, Subindu Kumar, et al. · Journal of Applied Physics · 15
The electron–hole overlap in the parabolic quantum well light emitting diode is much superior to the rectangular: even to that of a staggered quantum well
2019 · Apu Mistry, Anup Gorai, et al. · Optical and Quantum Electronics · 12
Conspicuous current dependence of the emission energy from In Ga1−N/GaN quantum well diodes
2015 · Dipankar Biswas, Siddhartha Panda · Optik · 11
A tunable LED based on InGaN-ZnSnN2/GaN QW in the infrared range, for optical communications
2017 · Anup Gorai, Dipankar Biswas · Optik · 10
Computations of the optical transitions and absorption spectra in a set of realistic, elongated InAs/GaAs quantum boxes having a Gaussian distribution
2011 · Sanjib Kabi, Siddhartha Panda, et al. · Journal of Applied Physics · 10
Low-temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition
1990 · M. J. Ludowise, D. Biswas, et al. · Applied Physics Letters · 10
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Analysis of luminescence spectra of rectangular and trapezoidal InGaN/GaN multiple quantum wells under varying bias conditions
2018 · Himanshu Karan, Mainak Saha, et al. · Optical Materials · 9
Inclusion of Indium, with doping in the barriers of InxGa1-xN/InyGa1-yN quantum wells reveals striking modifications of the emission properties with current for better operation of LEDs
2017 · Anup Gorai, Apu Mistry, et al. · Photonics and Nanostructures - Fundamentals and Applications · 7
Reconfirmation of the band offsets of InGaP/GaAs quantum wells
2010 · Sanjib Kabi, Tapas Das, et al. · Physica E Low-dimensional Systems and Nanostructures · 7
Unusual changes observed in the photoluminescence of annealed InxGa1−xN/GaN quantum wells explained
2007 · Dipankar Biswas, Subindu Kumar, et al. · Materials Letters · 7
Low-power exciton-based heterojunction bipolar transistors for thresholding logic applications
1991 · S. Goswami, S.-C. Hong, et al. · IEEE Journal of Quantum Electronics · 6
Impact of strain on the band offsets of important III–V quantum wells: InxGa1−xN/GaN, GaAs/InxGa1−xP and InxGa1−xAs/AlGaAs
2013 · Dipankar Biswas, Partha Pratim Bera, et al. · Materials Science in Semiconductor Processing · 5
The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers
2003 · G. Feak, D. Nichols, et al. · IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits · 4
Useful studies on the optical properties of annealed and non annealed InGaN/GaN single QW LEDs, with different dopings in the barrier
2018 · Apu Mistry, Dipankar Biswas · Optical Materials · 3
Dependence of the photoluminescence of annealed III-V semiconductor quantum dots on their shape and dimension
2008 · Subindu Kumar, Sanjib Kabi, et al. · Journal of Applied Physics · 3
Band offset of quantum wells computed from charge measurements
2003 · Dipankar Biswas, Satyajit Chakrabarti, et al. · physica status solidi (b) · 3
Optical Properties of Self-Assembled GaxIn1-xAs/InP Quantum Wires
2002 · B. Al�n, D. Biswas, et al. · physica status solidi (a) · 3
Optical and structural properties of molecular-beam epitaxial GaAs on sapphire
1989 · Albert Chin, Pallab Bhattacharya, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 3
Works count: 53
Citation count: 408
H-index: 10
I10-index: 13
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