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Author

Linhuan Gao

Institution: Xidian University
Observed institution: Xidian University
ORCID: 0009-0001-3011-9630
Observed ORCID: 0009-0001-3011-9630
OpenAlex ID: A5103457103
Single-event burnout mechanism in β -Ga2O3 Schottky barrier diodes
2025 · Xiufeng Song, Shenglei Zhao, et al. · Applied Physics Letters · 2
Investigation of High-Temperature Characteristics of GaN p-Channel Field-Effect Transistors at 200 °C
2026 · Linhuan Gao, Xiufeng Song, et al. · IEEE Transactions on Electron Devices
Enhanced High-Temperature Performance of In-Situ SiN GaN MIS-HEMTs With an AlN Back Barrier Up to 500 °C
2026 · Xuejing Sun, Xiufeng Song, et al. · IEEE Transactions on Electron Devices
Breakdown Mechanisms of Vertical GaN Junction Field-Effect Transistors and Enhanced Figure of Merit Using Gradient Doping Channel
2026 · Daoyuan Li, Shenglei Zhao, et al. · IEEE Transactions on Electron Devices
Works count: 4
Citation count: 2
H-index: 1
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