Author

Shuhei Mitani

Observed names: Mitani Shuhei, 周平箕谷

Observed institutions: ROHM, Kyoto University, Denso (Japan)

OpenAlex ID: A5103462283

Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures

2012 · Atthawut Chanthaphan, Takuji Hosoi, et al. · Applied Physics Letters · 50

690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

2012 · Yuki Nakano, R. Nakamura, et al. · Materials science forum · 43

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

2012 · Takuji Hosoi, Shuji Azumo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

2011 · Heiji Watanabe, Takashi Kirino, et al. · Materials science forum · 34

Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates

2011 · Takuji Hosoi, Kohei Konzono, et al. · Materials science forum · 34

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

2018 · Aiko Ichimura, Yasuhiro Ebihara, et al. · Materials science forum · 27

Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd

2018 · Yasuhiro Ebihara, Aiko Ichimura, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 26

Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

2012 · Takuji Hosoi, Takashi Kirino, et al. · Current Applied Physics · 25

AlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices

2009 · Takuji Hosoi, Makoto Harada, et al. · Materials science forum · 22

Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

2019 · Yasuhiro Ebihara, Junichi Uehara, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 21

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics

2010 · Takuji Hosoi, Yusuke Kagei, et al. · Materials science forum · 14

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

2013 · Heiji Watanabe, Daisuke Ikeguchi, et al. · Materials science forum · 12

Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices

2011 · Takuji Hosoi, Yusuke Kagei, et al. · Materials science forum · 11

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy

2010 · Kohei Kozono, Takuji Hosoi, et al. · Materials science forum · 11

Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface

2012 · Takuji Hosoi, Takashi Kirino, et al. · Materials science forum · 9

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices

2012 · Daisuke Ikeguchi, Takashi Kirino, et al. · Materials science forum · 9