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Tsutomu Hosoda

Observed names: Hosoda, Tsutomu, Tsutomu HOSODA
OpenAlex ID: A5103463096
600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates
2014 · Toshihide Kikkawa, Tsutomu Hosoda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
Dynamic performances of GaN-HEMT on Si in cascode configuration
2014 · Tatsuya Hirose, Miki Imai, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 40
Commercialization and reliability of 600 V GaN power switches
2015 · Toshihide Kikkawa, Tsutomu Hosoda, et al. · IEEE International Reliability Physics Symposium proceedings · 38
Short-Circuit Capability Demonstrated for GaN Power Switches
2021 · Davide Bisi, John Gritters, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 29
Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver
2022 · Davide Bisi, Long Nguyen, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 14
2.5-kW power supply unit with semi-bridgeless PFC designed for GaN-HEMT
2013 · Hiroshi Nakao, Yu Yonezawa, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 13
Short-Circuit Capability with GaN HEMTs : Invited
2022 · Davide Bisi, Bill Cruse, et al. · IEEE International Reliability Physics Symposium proceedings · 12
650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control
2016 · Saurabh Chowdhury, YiFeng Wu, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 12
Formation of ULSI Copper Minute Wiring by Copper Electro-deposition Process Using the Pre-adsorption of Additive.
2002 · Hidemi NAWAFUNE, Maiko AWANO, et al. · Journal of The Surface Finishing Society of Japan · 11
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600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications
2013 · Toshihide Kikkawa, Tsutomu Hosoda, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 6
650 V Highly Reliable GaN HEMTs on Si Substrates over multiple generations: Expanding usage of a mature 150 mm Si Foundry
2019 · Saurabh Chowdhury, YiFeng Wu, et al. · ASMC proceedings · 3
5000+ Wafers of 650 V Highly Reliable GaN HEMTs on Si Substrates: Wafer Breakage and Backside Contamination Results
2020 · Saurabh Chowdhury, YiFeng Wu, et al. · ASMC proceedings · 2
Development of 650V Automotive Grade GaN Power Transistors
2020 · K. Shono, Tsutomu Hosoda, et al. · 電気学会研究会資料
Works count: 14
Citation count: 228
H-index: 9
I10-index: 9
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