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Amit Kumar Sahoo

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements
2016 · Nandha Kumar Subramani, Amit Kumar Sahoo, et al. · IEEE Transactions on Microwave Theory and Techniques · 41
A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs
2012 · Amit Kumar Sahoo, Sébastien Fregonese, et al. · IEEE Transactions on Electron Devices · 37
Thermal Impedance Modeling of Si–Ge HBTs From Low-Frequency Small-Signal Measurements
2010 · Amit Kumar Sahoo, Sébastien Fregonese, et al. · IEEE Electron Device Letters · 23
Mutual thermal coupling in SiGe:C HBTs
2013 · Mario Weiss, Amit Kumar Sahoo, et al. · Symposium on Microelectronics Technology and Devices · 19
22FDSOI device towards RF and mmWave applications
2021 · Zhixing Zhao, Steffen Lehmann, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 17
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition
2015 · A.D.D. Dwivedi, Anjan Chakravorty, et al. · Solid-State Electronics · 17
Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation
2011 · Amit Kumar Sahoo, Sebastien Fregonese, et al. · European Solid-State Device Research Conference · 17
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A scalable model for temperature dependent thermal resistance of SiGe HBTs
2013 · Amit Kumar Sahoo, Sebastien Fregonese, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 16
A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs
2014 · Amit Kumar Sahoo, Sebastien Fregonese, et al. · IEEE Electron Device Letters · 13
Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs
2013 · Mario Weiss, Amit Kumar Sahoo, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 13
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Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors
2012 · Amit Kumar Sahoo, Mario Weiß, et al. · Solid-State Electronics · 11
80ns/45GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices
2013 · Mario Weiß, Sébastien Fregonese, et al. · Solid-State Electronics · 10
Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs
2011 · Amit Kumar Sahoo, Sebastien Fregonese, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 10
Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology
2013 · Mario Weiss, Cedric Majek, et al. · IEEE Electron Device Letters · 9
Electro-thermal Characterizations, Compact Modeling and TCAD based Device Simulations of advanced SiGe : C BiCMOS HBTs and of nanometric CMOS FET
2012 · Amit Kumar Sahoo · theses.fr (ABES) · 8
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A Study on Self-Heating and Mutual Thermal Coupling in SiGe Multi-Finger HBTs
2016 · A. D. D. Dwivedi, Rosario D’Esposito, et al. · Journal of Electronic Materials · 6
Pulsed I(V) — pulsed RF measurement system for microwave device characterization with 80ns/45GHz
2012 · Mario Weis, Sebastien Fregonese, et al. · European Solid-State Device Research Conference · 6
Characterization of mutual heating inside a SiGe ring oscillator
2012 · Mario Weis, Marco Santorelli, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 5
Characterization of self-heating in Si–Ge HBTs with pulse, DC and AC measurements
2012 · Amit Kumar Sahoo, Sébastien Fregonese, et al. · Solid-State Electronics · 4
Isothermal Electrical Characteristic Extraction for mmWave HBTs
2014 · Amit Kumar Sahoo, Sebastien Fregonese, et al. · IEEE Transactions on Electron Devices · 3
Electro-Thermal Device Characterization & Modelling
2013 · Sébastien Frégonèse, Amit Kumar Sahoo, et al. · HAL
Final Version MWEISS Submission Number 130
2013 · M. Weiß, Amit Kumar Sahoo, et al.
Electro-thermal Characterizations, Compact Modeling and TCAD based Device Simulations of advanced SiGe:C BiCMOS HBTs and of nanometric CMOS FET
2012 · Sahoo, Amit Kumar · HAL
Works count: 24
Citation count: 285
H-index: 11
I10-index: 13
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