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Yike Kong

Observed name: Kong Yike
OpenAlex ID: A5103708718
Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: A first principle research
2016 · Sihao Xia, Lei Liu, et al. · Applied Surface Science · 56
Cs and Cs/O adsorption mechanism on GaN nanowires photocathode
2017 · Sihao Xia, Lei Liu, et al. · Journal of Materials Science · 36
Research on quantum efficiency of GaN wire photocathode
2016 · Sihao Xia, Lei Liu, et al. · Optical Materials · 35
Uniaxial strain effects on the optoelectronic properties of GaN nanowires
2016 · Sihao Xia, Lei Liu, et al. · Superlattices and Microstructures · 35
Research on quantum efficiency and photoemission characteristics of negative-electron-affinity GaN nanowire arrays photocathode
2016 · Sihao Xia, Lei Liu, et al. · Optical and Quantum Electronics · 29
Study of residual gas adsorption on GaN nanowire arrays photocathode
2017 · Sihao Xia, Lei Liu, et al. · Applied Surface Science · 17
A first principle study on oxygen adsorption and incorporation on the (1 0 0) surface of [0 0 1]-oriented GaN nanowires
2017 · Sihao Xia, Lei Liu, et al. · Materials Research Express · 10
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Study of Cs/NF3adsorption on GaN (0 0 1) surface
2017 · Yu Diao, Lei Liu, et al. · Materials Research Express · 8
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Atomic structures and electronic properties of III-nitride alloy nanowires: A first-principle study
2016 · Sihao Xia, Lei Liu, et al. · Computational and Theoretical Chemistry · 8
Research on optoelectronic properties of GaN nanowires with N vacancy
2016 · Yike Kong, Lei Liu, et al. · Computational and Theoretical Chemistry · 8
Optoelectronic properties of Mg doping GaN nanowires
2016 · Yike Kong, Lei Liu, et al. · Optical and Quantum Electronics · 7
A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer
2016 · Sihao Xia, Lei Liu, et al. · Chemical Physics Letters · 7
Cs/NF3 adsorption on [001]-oriented GaN nanowire surface: A first principle calculation
2017 · Yu Diao, Lei Liu, et al. · Superlattices and Microstructures · 6
Theoretical research on bandgap of H-saturated Ga1−xAlxN nanowires
2016 · Sihao Xia, Lei Liu, et al. · International Journal of Modern Physics B · 5
Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method
2017 · Yu Diao, Lei Liu, et al. · International Journal of Modern Physics B · 4
A first-principles study of the effects of different Al constituents on Ga1−xAlxN nanowires
2016 · Sihao Xia, Lei Liu, et al. · International Journal of Modern Physics B · 4
First-principle study on electronic structure and optical properties of GaN nanowires with different cross-sections
2016 · Yike Kong, Lei Liu, et al. · International Journal of Modern Physics B · 4
Influences of Mg doping and N vacancy on the optoelectronic properties of GaN nanowires
2016 · Si-Hao Xia, Lei Liu, et al. · Optical and Quantum Electronics · 3
Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation
2016 · Sihao Xia, Lei Liu, et al. · Modern Physics Letters B · 3
Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects
2016 · Yike Kong, Lei Liu, et al. · Optik · 2
GaNナノワイヤアレイ光電陰極に及ぼす残留ガス吸着の研究【Powered by NICT】
2017 · Xia Sihao, Lei Liu, et al. · Applied Surface Science
GaNワイヤ光電陰極の量子効率に関する研究【Powered by NICT】
2017 · Xia Sihao, Lei Liu, et al. · Optical Materials
Corrigendum to “Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects” [Optik: Int. J. Light Electron Opt. 127 (20) (2016) 8662–8669]
2016 · Yike Kong, Lei Liu, et al. · Optik
超薄n型SiドープGaNキャップ層を有するNEA GaN光電陰極に関するDFT研究【Powered by NICT】
2016 · Xia Sihao, Lei Liu, et al. · Chemical Physics Letters
Works count: 24
Citation count: 287
H-index: 8
I10-index: 7
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