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Takashi Kono

Observed names: T. Kono, Takashi KONO
Observed institution: Renesas Electronics (Japan)
ORCID: 0009-0006-3560-1924
Observed ORCID: 0009-0006-3560-1924
OpenAlex ID: A5103754118
40-nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macros for Automotive With 160-MHz Random Access for Code and Endurance Over 10 M Cycles for Data at the Junction Temperature of 170 $^{\circ}$C
2013 · Takashi Kono, Takashi Ito, et al. · IEEE Journal of Solid-State Circuits · 37
7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C
2015 · Yasuhiko Taito, Masaya Nakano, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 35
A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170C
2015 · Yasuhiko Taito, Takashi Kono, et al. · IEEE Journal of Solid-State Circuits · 31
15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs
2024 · Tomoya Ogawa, Ken Matsubara, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 29
Embedded flash technology for automotive applications
2016 · Tadaaki Yamauchi, Yasuo Yamaguchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
7.6 A 90nm embedded 1T-MONOS flash macro for automotive applications with 0.07mJ/8kB rewrite energy and endurance over 100M cycles under Tj of 175°C
2016 · Hidenori Mitani, Ken Matsubara, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 19
A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C
2022 · Takahiro Shimoi, Ken Matsubara, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 13
A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C
2023 · Takahiro Shimoi, Ken Matsubara, et al. · IEEE Journal of Solid-State Circuits · 12
Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age
2020 · Takashi KONO, Yasuhiko TAITO, et al. · IEICE Transactions on Electronics · 11
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A 24-MB Embedded Flash System Based on 28-nm SG-MONOS Featuring 240-MHz Read Operations and Robust Over-the-Air Software Update for Automotive Applications
2019 · Akihiko Kanda, Takashi Kono, et al. · IEEE Solid-State Circuits Letters · 11
High-Temperature Stable Physical Unclonable Functions with Error-Free Readout Scheme Based on 28nm SG-MONOS Flash Memory for Security Applications
2017 · Tomoya Saito, Hirokazu Nagase, et al. · IEEE International Memory Workshop (IMW) · 11
A 40-nm Embedded SG-MONOS Flash Macro for High-End MCU Achieving 200-MHz Random Read Operation and 7.91-Mb/mm2 Density With Charge-Assisted Offset Cancellation Sense Amplifier
2022 · Masaya Nakano, Yoshinobu Kaneda, et al. · IEEE Journal of Solid-State Circuits · 10
Processing In-Memory Architecture with On-Chip Transfer Learning Function for Compensating Characteristic Variation
2020 · Masanori Hayashikoshi, Junichi Suzuki, et al. · IEEE International Memory Workshop (IMW) · 8
A 20Mb Embedded STT-MRAM Array Achieving 72% Write Energy Reduction with Self-termination Write Schemes in 16nm FinFET Logic Process
2021 · T. Ito, T. Saito, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 pJ/bit Read Energy with 64 MHz Access for IoT Applications
2019 · Ken Matsubara, Tsutomu Nagasawa, et al. · Symposium on VLSI Circuits · 4
A 24MB Embedded Flash System Based on 28nm SG-MONOS Featuring 240MHz Read Operations and Robust Over-The-Air Software Update for Automotive
2019 · Akihiko Kanda, Takashi Kurafuji, et al. · Symposium on VLSI Circuits · 4
Overview of Embedded Flash Memory Technology
2017 · Takashi Kono, Tomoya Saito, et al. · Integrated circuits and systems · 4
Embedded non-volatile memory system as an enabler of smarter world
2017 · Takashi Kono · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 4
A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier
2021 · Masaya Nakano, Yoshinobu Kaneda, et al. · IEEE Asian Solid-State Circuits Conference (A-SSCC) · 3
A 2T-MONOS Embedded Flash Macro With 65-nm SOTB Technology Achieving 0.15-pJ/bit Read Energy With 80-MHz Access for IoT Applications
2020 · Ken Matsubara, Tsutomu Nagasawa, et al. · IEEE Solid-State Circuits Letters · 3
An On-Chip DC-DC Converter and Power Management System Achieving Zero Standby-to-Active Transition Time in MCU
2023 · Toyohiro Shimogawa, Makoto Nonaka, et al. · IEEE Asian Solid-State Circuits Conference (A-SSCC) · 1
High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications
2017 · Takahiro Shimoi, Tomoya Saito, et al. · IEICE Technical Report; IEICE Tech. Rep. · 1
Embedded Flash Technology for Automotive Applications
2017 · Masaya Nakano, Ito Takashi, et al. · IEICE Technical Report; IEICE Tech. Rep. · 1
Session 11 overview: Nonvolatile memory solutions
2017 · Takashi Kono, Ki-Tae Park, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 1
Introduction to the January Special Issue on the 2017 IEEE International Solid-State Circuits Conference
2017 · Keith A. Bowman, Muhammad M. Khellah, et al. · IEEE Journal of Solid-State Circuits
Works count: 28
Citation count: 278
H-index: 11
I10-index: 12
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