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Author

David Nirmal

Observed name: D. Nirmal
Institution: Karunya University
Observed institution: Karunya University
ORCID: 0000-0002-9751-2816
Observed ORCID: 0000-0002-9751-2816
OpenAlex ID: A5104329129
Drift Layer Engineering for Electric Field Management in Vertical Gallium Nitride Fin Field Effect Transistors for Power Electronic Applications
2026 · K. Paul Finney Hinn, Ancy Michel, et al. · physica status solidi (a) · 1
Optimization and High‐Frequency Performance Evaluation of AlGaN/GaN High‐Electron‐Mobility Transistors Aspect Ratio Scaling for Millimeter‐Wave Applications
2025 · Samuel Angen Franklin, Subhash Chander, et al. · physica status solidi (a) · 1
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Demonstration of Novel Multi-Channel Vertical C-Shaped Nanosheet FET with $\mathrm{f}_{\mathrm{T}}$ of 352 GHz for Low-Power RF Circuits
2026 · Angelin Delighta A, Binola K Jebalin. I. V, et al. · International Conference on Communication, Computing and Electronics Systems (ICCCES)
Investigating The Structural And Energy Band Attributes Of Titanium Dioxide With Subtle Changes In Precursor Concentration For Potential Memristor Applications
2024 · David Nirmal, Done Rinshun Paul, et al. · International Journal of Materials Engineering Innovation
III–V compound semiconductor transistors–from planar to nanowire structures
2019 · David Nirmal, John Ajayan · Institution of Engineering and Technology eBooks
Works count: 5
Citation count: 2
H-index: 1
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