Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Juin J. Liou
Observed names:
JUIN J. LIOU,
Juin J Liou,
Juin Liou,
Juin. J. Liou,
Liou, Juin J,
Liou, Juin J.
show all 6
Institution:
North Minzu University
Observed institutions:
University of Central Florida,
Chinese Academy of Sciences,
North Minzu University,
Zhengzhou University,
Institute of Microelectronics,
Huazhong University of Science and Technology,
Zhejiang University
show all 7
ORCID:
0000-0002-5815-5078
Observed ORCID:
0000-0002-5815-5078
OpenAlex ID:
A5105193840
Revisiting MOSFET threshold voltage extraction methods
2012
·
Adelmo Ortiz-Conde
, Francisco J. García-Sánchez
, et al.
·
Microelectronics Reliability
·
375
A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs
2007
·
Adelmo Ortiz-Conde
, Francisco J. Garcia-Sanchez
, et al.
·
IEEE Transactions on Electron Devices
·
131
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters
2017
·
Adelmo Ortiz-Conde
, Andrea Sucre-González
, et al.
·
Microelectronics Reliability
·
57
An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs
2015
·
Wanling Deng
, Junkai Huang
, et al.
·
IEEE Electron Device Letters
·
49
Modelling solar cell S-shaped I-V characteristics with DC lumped-parameter equivalent circuits a review
2017
·
Francisco García-Sánchez
, Beatriz Romero
, et al.
·
Facta universitatis - series Electronics and Energetics
·
35
PDF
Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer
2021
·
Muhammad Nawaz Sharif
, Muhammad Usman
, et al.
·
Nanotechnology
·
22
PDF
Development of an Electrostatic Discharge Protection Solution in GaN Technology
2013
·
Zhixin Wang
, Juin J. Liou
, et al.
·
IEEE Electron Device Letters
·
20
Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses
2010
·
David F. Ellis
, Yuanzhong Zhou
, et al.
·
IEEE Transactions on Electron Devices
·
20
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction
2009
·
Adelmo Ortiz-Conde
, Francisco J. García-Sánchez
, et al.
·
Microelectronics Reliability
·
20
Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics
2008
·
Ramón Salazar
, Adelmo Ortiz-Conde
, et al.
·
Solid-State Electronics
·
15
A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction
2014
·
Francisco J. García-Sánchez
, Adelmo Ortiz-Conde
, et al.
·
Microelectronics Reliability
·
11
Nanoscale Bias-Annealing Effect in Postirradiated Thin Silicon Dioxide Films Observed by Conductive Atomic Force Microscopy
2007
·
You-Lin Wu
, Shi-Tin Lin
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
10
Electrostatic Discharge Protection: Advances and Applications
2017
·
Liou, Juin J.
, Iniewski, Krzysztof
·
CRC Press eBooks
·
9
A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs
2009
·
Juan Muci
, Denise C Lugo Muñoz
, et al.
·
Semiconductor Science and Technology
·
9
PDF
Integration-based approach to evaluate the sub-threshold slope of MOSFETs
2009
·
Adelmo Ortiz-Conde
, Francisco J. García-Sánchez
, et al.
·
Microelectronics Reliability
·
8
Extraction of MOSFET Model Parameters from the Measured Source-to-drain Resistance
2009
·
Francisco J. Garcia-Sanchez
, Juan Muci
, et al.
·
ECS Transactions
·
6
PDF
Relative Errors of Free-Carrier Density at Different Temperatures Calculated from Approximations for the Fermi-Dirac Integral
1995
·
Yun Yue
, Juin J. Liou
, et al.
·
Japanese Journal of Applied Physics
·
6
Performance enhancement of 254 nm DUV LEDs utilizing tunnel junction contact layer and asymmetric polarization-induced doping electron blocking layer
2025
·
Aoxiang Zhang
, Jiayi Yao
, et al.
·
Optics Express
·
5
Study on leakage current properties of BiFeO3 thin films with Pb(Zr,Ti)O3 buffer layer
2016
·
Ze Jia
, Xiao Wu
, et al.
·
Ferroelectrics
·
5
Study on polarization characteristics of BiFeO3thin films prepared by sol-gel spin-coating technology
2015
·
Ze Jia
, Xiao Wu
, et al.
·
The European Physical Journal Applied Physics
·
5
NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications
2012
·
Slavica Malobabic
, Javier A. Salcedo
, et al.
·
IEEE Electron Device Letters
·
5
InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
2008
·
Xiang Liu
, Jiann S. Yuan
, et al.
·
Microelectronics Reliability
·
5
Statistical modeling of MOS devices for parametric yield prediction
2002
·
Juin J. Liou
, Qiang Zhang
, et al.
·
Microelectronics Reliability
·
5
Modeling of On-Chip Differential Inductors and Transformers/Baluns
2007
·
Ji Chen
, Juin J. Liou
·
IEEE Transactions on Electron Devices
·
4
Reference voltage generation scheme enhancing speed and reliability for 1T1C‐type FRAM
2014
·
Ze Jia
, Gong Zhang
, et al.
·
Electronics Letters
·
3
Show more works
View as search
Works count:
65
Citation count:
863
H-index:
11
I10-index:
12
Year
Topic
Type
