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Kyoji Mizoguchi
Institution:
Sony Semiconductor Solutions Corporation (Japan)
Observed institutions:
Sony Semiconductor Solutions Corporation (Japan),
Chuo University
OpenAlex ID:
A5105818263
Data-Retention Characteristics Comparison of 2D and 3D TLC NAND Flash Memories
2017
·
Kyoji Mizoguchi
, Tomonori Takahashi
, et al.
·
IEEE International Memory Workshop (IMW)
·
73
1.22μm 35.6Mpixel RGB Hybrid Event-Based Vision Sensor with 4.88μm-Pitch Event Pixels and up to 10K Event Frame Rate by Adaptive Control on Event Sparsity
2023
·
Kazutoshi Kodama
, Yusuke Sato
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
55
A 2.97μm-Pitch Event-Based Vision Sensor with Shared Pixel Front-End Circuitry and Low-Noise Intensity Readout Mode
2023
·
Atsumi Niwa
, Futa Mochizuki
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
40
Lateral charge migration suppression of 3D-NAND flash by vth nearing for near data computing
2017
·
Kyoji Mizoguchi
, Shohei Kotaki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
33
Automatic Data Repair Overwrite Pulse for 3D-TLC NAND Flash Memories with 38x Data-Retention Lifetime Extension
2019
·
Kyoji Mizoguchi
, Kyosuke Maeda
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
10
RTN impact on data-retention failure/recovery in scaled (∼1Ynm) TLC NAND flash memories
2017
·
Seiichi Aritome
, Tomonori Takahashi
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
6
Error elimination ECC by horizontal error detection and vertical-LDPC ECC to increase data-retention time by 230% and acceptable bit-error rate by 90% for 3D-NAND flash SSDs
2018
·
Shun Suzuki
, Yoshiaki Deguchi
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
3
Privacy-Aware Data-Lifetime Control NAND Flash System for Right to be Forgotten with In-3D Vertical Cell Processing
2019
·
Shun Suzuki
, Kyoji Mizoguchi
, et al.
·
IEEE Asian Solid-State Circuits Conference (A-SSCC)
·
2
Less Reliable Page Error Reduction for 3D-TLC NAND Flash Memories with Data Overhead Reduction by 40% and Data-retention Time Increase by 5.0x
2019
·
Kyosuke Maeda
, Kyoji Mizoguchi
, et al.
·
Silicon Nanoelectronics Workshop (SNW)
·
1
38xデータ保持寿命延長による3D-TLC NANDフラッシュメモリのための自動データ修復オーバライト・パルス【JST・京大機械翻訳】
2019
·
Kyoji Mizoguchi
, Maeda Kyosuke
, et al.
·
IEEE Conference Proceedings
Data-Retention Lifetime evaluation of TLC NAND Flash Memories
2018
·
Kyoji Mizoguchi
, Tomonori Takahashi
, et al.
·
The Japan Society of Applied Physics
RTN Impact on Data-Retention Failure/Recovery Mechanism in Sub-20nm NAND Flash Memories
2018
·
Kyoji Mizoguchi
, Tomonori Takahashi
, et al.
·
The Japan Society of Applied Physics
High Reliability Techniques of 3D-NAND Flash Memories by Lateral Charge Migration Suppression
2018
·
Kyoji Mizoguchi
, Shohei Kotaki
, et al.
·
The Japan Society of Applied Physics
Error Analysis of NAND Flash Memories for Long-Term Storage
2016
·
Kyoji Mizoguchi
, Tomonori Takahashi
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
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Works count:
14
Citation count:
223
H-index:
6
I10-index:
5
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