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Sungwon Cho

Observed name: Cho, Sungwon
OpenAlex ID: A5106923465
Monolithically Stackable 1T1C 3-D DRAM: A Technical Survey
2026 · Kiseok Lee, Sungwon Cho, et al. · IEEE Transactions on Electron Devices · 11
Monolithic 3D Stackable DRAM Design with BEOL-Compatible Oxide Channel Access Transistor
2025 · Po-Kai Hsu, Sungwon Cho, et al. · IEEE International Memory Workshop (IMW) · 11
Development of Wafer-Type Plasma Monitoring Sensor with Automated Robot Arm Transfer Capability for Two-Dimensional In Situ Processing Plasma Diagnosis
2024 · Haewook Park, Juhyun Kim, et al. · Sensors · 3
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Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
2026 · Sungwon Cho, Po-Kai Hsu, et al. · IEEE International Reliability Physics Symposium proceedings · 1
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Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors
2026 · Jeong, Gyujun, Lee, Junmo, et al. · arXiv (Cornell University)
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Monolithic 3-D Stackable DRAM With Oxide-Channel- Access Transistors: Density Scaling Through Dual-Deck Stacking and Multilevel Cell
2026 · Po-Kai Hsu, Sungwon Cho, et al. · IEEE Transactions on Electron Devices
System–Technology Co-Optimization of Bitline Routing and Bonding Pathways in Monolithic 3D DRAM Architectures
2026 · Kiseok Lee, Sungwon Cho, et al. · IEEE Silicon Nanoelectronics Workshop
Benchmarking Monolithic 1T1C 3D DRAM Cell Architectures
2026 · Kiseok Lee, Sungwon Cho, et al. · IEEE International Memory Workshop (IMW)
Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
2026 · IEEE International Symposium on Reliability Physics 2026, Cho, Sungwon, et al. · Underline Science Inc.
Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
2026 · Jeong, Gyujun, Cho, Sungwon, et al. · arXiv (Cornell University)
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Works count: 10
Citation count: 26
H-index: 3
I10-index: 2
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