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A. Ashok Kumar

Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures
2011 · V. Rajagopal Reddy, M. Siva Pratap Reddy, et al. · Journal of Alloys and Compounds · 81
Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (100)
2009 · V. Janardhanam, A. Ashok Kumar, et al. · Journal of Alloys and Compounds · 80
Thin manganese films on Si(111)-(7 × 7): electronic structure and strain in silicide formation
2004 · Ashwani Kumar, M Tallarida, et al. · Journal of Physics D Applied Physics · 63
Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature
2011 · M. Siva Pratap Reddy, A. Ashok Kumar, et al. · Thin Solid Films · 50
Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range
2019 · Arvind Kumar, Ashwani Kumar, et al. · Superlattices and Microstructures · 48
Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range
2011 · B. Prasanna Lakshmi, M. Siva Pratap Reddy, et al. · Current Applied Physics · 47
Current–voltage–temperature (I–V–T) characteristics of Pd/Au Schottky contacts on n-InP (1 1 1)
2008 · M. Bhaskar Reddy, A. Ashok Kumar, et al. · Current Applied Physics · 46
Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure
2012 · V. Rajagopal Reddy, M. Siva Pratap Reddy, et al. · Thin Solid Films · 42
Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer
2012 · A. Ashok Kumar, V. Rajagopal Reddy, et al. · Journal of Alloys and Compounds · 39
Electrical Properties of Pt/n-Ge Schottky Contact Modified Using Copper Phthalocyanine (CuPc) Interlayer
2011 · A. Ashok Kumar, V. Rajagopal Reddy, et al. · Journal of The Electrochemical Society · 36
Investigation of barrier inhomogeneities in I-V and C-V characteristics of Ni/n-TiO2/p-Si/Al heterostructure in wide temperature range
2018 · Arvind Kumar, K.K. Sharma, et al. · Superlattices and Microstructures · 31
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
2013 · A. Ashok Kumar, L. Dasaradha Rao, et al. · Current Applied Physics · 28
Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au–Cu phthalocyanine interlayer
2020 · P.R. Sekhar Reddy, V. Janardhanam, et al. · Thin Solid Films · 20
Structural, chemical, optical, electrical and photodiode properties of Au/ZnPc/undoped-InP MPS-type diode using a ZnPc interlayer
2024 · A. Usha Rani, D. Surya Reddy, et al. · Materials Science and Engineering B · 18
Evaluation of Schottky barrier parameters of Pd/Pt Schottky contacts on n-InP (100) in wide temperature range
2008 · A. Ashok Kumar, V. Janardhanam, et al. · Superlattices and Microstructures · 17
Exploration of photoresponsivity, specific detectivity and interface properties of Au/ZnPc/InP/In photodiode at different illumination wavelengths
2024 · A. Usha Rani, S. Ashajyothi, et al. · Thin Solid Films · 15
Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots
2015 · Hemant Ghadi, Saumya Sengupta, et al. · IEEE Transactions on Nanotechnology · 13
Rapid thermal annealing effects on electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111)
2008 · M. Bhaskar Reddy, V. Janardhanam, et al. · physica status solidi (a) · 13
Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
2014 · Hemant Ghadi, Akshay Agarwal, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 12
Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (1 1 1) diodes
2009 · M. Bhaskar Reddy, V. Janardhanam, et al. · Current Applied Physics · 11
Annealing temperature effect on structural, electronic features and current transport process of Au/CoPc/undoped-InP MPS-type Schottky structure
2023 · V. Rajagopal Reddy, A. Usha Rani, et al. · Journal of Molecular Structure · 10
Structural and Electrical Properties of Ag/n-TiO2/p-Si/Al Heterostructure Fabricated by Pulsed Laser Deposition Technique
2017 · Arvind Kumar, K. K. Sharma, et al. · Journal of Electronic Materials · 10
Effect of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP (100) Schottky rectifiers
2009 · V. Janardhanam, A. Ashok Kumar, et al. · physica status solidi (a) · 10
Electrical and photodiode possessions of the Au/V2O5/un-InP MIS-type photodiode under different illumination light intensities
2025 · D. Surya Reddy, A. Ashok Kumar, et al. · Materials Science and Engineering B · 9
Chemical States, Structural, Electrical and Current Phenomenon Properties of a Au/Cobalt Phthalocyanine/Undoped-InP MPS-Type Diode with a CoPc Interlayer
2024 · A. Usha Rani, V. Rajagopal Reddy, et al. · Journal of Inorganic and Organometallic Polymers and Materials · 9
Works count: 53
Citation count: 858
H-index: 15
I10-index: 23
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