Author

Muhammad Bilal Khan

Observed name: Khan, Muhammad Bilal

Institution: Helmholtz-Zentrum Dresden-Rossendorf

Observed institutions: Helmholtz-Zentrum Dresden-Rossendorf, Center for Advancing Electronics Dresden, Technische Universität Dresden, Colorado State University

ORCID: 0000-0003-4627-9433

Observed ORCID: 0000-0003-4627-9433

OpenAlex ID: A5107980969

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

2022 · Mao Wang, Ye Yu, et al. · Nanoscale · 21

Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing

2021 · Muhammad Bilal Khan, Slawomir Prucnal, et al. · Langmuir · 15

Formation and crystallographic orientation of NiSi2–Si interfaces

2020 · Florian Fuchs, Muhammad Bilal Khan, et al. · Journal of Applied Physics · 13

Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

2023 · Sayantan Ghosh, Muhammad Bilal Khan, et al. · ACS Applied Materials & Interfaces · 9

High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing

2025 · Sayantan Ghosh, Muhammad Bilal Khan, et al. · ACS Applied Electronic Materials · 6

Open-Path Cavity Ring-Down Spectroscopy for Simultaneous Detection of Hydrogen Chloride and Particles in Cleanroom Environment

2024 · Muhammad Bilal Khan, Christian L’Orange, et al. · Sensors · 5

Works count: 14

Citation count: 69

H-index: 5

I10-index: 3