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Ezekiel Omotoso

Optimization of graphene oxide through various Hummers' methods and comparative reduction using green approach
2021 · Allen Abiodun Olorunkosebi, Marcus Adebola Eleruja, et al. · Diamond and Related Materials · 99
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
2015 · E. Omotoso, W.E. Meyer, et al. · Materials Science in Semiconductor Processing · 59
Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation
2015 · Ezekiel Omotoso, Walter E. Meyer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 40
Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide
2017 · V.E. Gora, A. Chawanda, et al. · Physica B Condensed Matter · 36
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Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
2015 · A.T. Paradzah, F.D. Auret, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 31
Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC
2015 · E. Omotoso, W.E. Meyer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 25
Rapid synthesis and characterizations of defect-enhanced WO3-δ thin film electrode for effective energy storage application in asymmetric supercapacitor devices
2023 · Lukman O. Animasahun, Bidini A. Taleatu, et al. · Materials Research Bulletin · 22
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
2017 · E. Omotoso, W.E. Meyer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 22
Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences
2015 · E. Omotoso, W.E. Meyer, et al. · Physica B Condensed Matter · 22
Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes
2016 · A. T. Paradzah, E. Omotoso, et al. · Journal of Electronic Materials · 21
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
2016 · E. Omotoso, W.E. Meyer, et al. · Materials Science in Semiconductor Processing · 20
Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons
2018 · E. Omotoso, A.T. Paradzah, et al. · Surface and Coatings Technology · 19
Induced defect levels of P and Al vacancy-complexes in 4 H -SiC: A hybrid functional study
2018 · E. Igumbor, O. Olaniyan, et al. · Materials Science in Semiconductor Processing · 15
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Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs
2017 · S.M. Tunhuma, F.D. Auret, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11
Defect levels induced by double substitution of B and N in 4H-SiC
2019 · E. Igumbor, H.T. Danga, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 10
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Surface structure and photoemission studies of nanocrystalline TiO2 layer/ITO coated glass interface
2015 · Bidini Alade Taleatu, Ezekiel Omotoso, et al. · Journal of Electron Spectroscopy and Related Phenomena · 9
DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC
2022 · Ezekiel Omotoso, Walter E. Meyer, et al. · Journal of Materials Science Materials in Electronics · 8
Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC
2020 · E. Igumbor, G.M. Dongho-Nguimdo, et al. · Journal of Physics and Chemistry of Solids · 8
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Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC
2018 · E Igumbor, O Olaniyan, et al. · Journal of Physics Condensed Matter · 8
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DLTS characterization of defects in GaN induced by electron beam exposure
2017 · P.N.M. Ngoepe, W.E. Meyer, et al. · Materials Science in Semiconductor Processing · 8
Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width
2020 · E Omotoso, A T Paradzah, et al. · Materials Research Express · 7
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The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC
2018 · E. Omotoso, F. D. Auret, et al. · Applied Physics A · 7
Rare earth substitutional impurities in germanium: A hybrid density functional theory study
2017 · E. Igumbor, E. Omotoso, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
Electrically active defects in p-type silicon after alpha-particle irradiation
2017 · Helga T. Danga, F. Danie Auret, et al. · Physica B Condensed Matter · 6
Rare earth interstitial-complexes in Ge: Hybrid density functional studies
2017 · E. Igumbor, E. Omotoso, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
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Works count: 45
Citation count: 568
H-index: 13
I10-index: 15
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