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Yawara Kaneko

Observed names: KANEKO, YAWARA, Yawara KANEKO, Yawara Kaneko Yawara Kaneko
OpenAlex ID: A5108204343
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
1998 · Tetsuya Takeuchi, Christian Wetzel, et al. · Applied Physics Letters · 622
Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
2001 · Satoshi Kamiyama, Motoaki Iwaya, et al. · Journal of Crystal Growth · 86
600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy
1994 · Ichirou Nomura, Katsumi Kishino, et al. · Japanese Journal of Applied Physics · 62
GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
1998 · Hisaki Katoh, Tetsuya Takeuchi, et al. · Japanese Journal of Applied Physics · 43
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Refractive indices measurement of (GaInP)m/(AlInP)n quasi-quaternaries and GaInP/AlInP multiple quantum wells
1994 · Yawara Kaneko, Katsumi Kishino · Journal of Applied Physics · 40
Quantum-confined Stark effect in strained GaInN quantum wells on sapphire (0 0 0 1)
1998 · Tetsuya Takeuchi, Shigetoshi Sota, et al. · Journal of Crystal Growth · 26
600-nm wavelength range GaInP/AlInP quasi-quaternary compounds and lasers prepared by gas-source molecular-beam epitaxy
1993 · Yawara Kaneko, Ichirou Nomura, et al. · Journal of Applied Physics · 25
High-optical-quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas-source molecular-beam epitaxy
1989 · Akihiko Kikuchi, Katsumi Kishino, et al. · Journal of Applied Physics · 22
Melt-back etching of GaN
1997 · Yawara Kaneko, Norihide Yamada, et al. · Solid-State Electronics · 16
600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)
1991 · Akihiko Kikuchi, Katsumi Kishino Katsumi Kishino, et al. · Japanese Journal of Applied Physics · 14
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Gas source molecular beam epitaxial growth and characterization of 600–660 nm GaInP/AlInP double-heterostructure lasers
1993 · Katsumi Kishino, Akihiko Kikuchi, et al. · Thin Solid Films · 13
CW Operation of 0.67 µm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE
1985 · Katsumi Kishino, Yawara Kaneko, et al. · Japanese Journal of Applied Physics · 2
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Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer
2000 · Nobuaki Hayashi, Satoshi Kamiyama, et al. · Japanese Journal of Applied Physics · 1
Raman Scattering from Interface Phonons in GaInP/AlInP Superlattice
1994 · Soichi Ochiai, Yoshiko Tanokura, et al. · Journal of the Physical Society of Japan · 1
Strained SQW GaInP/AlInP visible lasers fabricated by a novel shutter control method in gas source molecular beam epitaxy
1992 · Ichirou Nomura, Katsumi Kishino, et al. · Conference on Lasers and Electro-Optics · 1
Asymmetric Shift Selectivity Control and Application for Hologram Position Sensing in Collinear Holographic Information Storage System
2007 · Yawara Kaneko · Optical Data Storage
Investigation on the gain-switching of GaInN MQW laser diodes
2000 · C. Marinelli, I.Y. Khrushchev, et al. · Cambridge University Engineering Department Publications Database
Flip-chip GaN LED with Highly Reflective Ag P-contact
1998 · Y. Kondoh, Satoshi Watanabe, et al.
Research on GaInP/AlInP Quasi-Quaternaries and Red Light Visible Semiconductor Lasers
1994 · Yawara Kaneko
GSMBE에 의한 단파장 GaInP/AIInP DBR 반도체 레이저 제작 및 특성 ( The 607nm GaInP/AIInP Distributed Bragg Reflector Visible Laser Grown by Gas Source Molecular Beam Epitaxy )
1993 · 장동훈, 유지범, et al. · 전자공학회논문지-A
600nm Range GaInP/AlInP Strained Quantum Well Semiconductor Lasers Grown by GSMBE on Misorientation Substrates
1993 · Katsumi KISHINO, Ichirou NOMURA, et al. · International Conference on Solid State Devices and Materials (SSDM)
GalnP/AllnP quasi-quaternary crystals and 607-640-nm wavelength qyasiquaternary lasers grown by gas-source-molecular beam epitaxy
1993 · Yawara Kaneko, Katsumi Kishino, et al.
Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector Laser Diode
1993 · Dong-Hoon Jang, Ji-Beom Yoo, et al. · Japanese Journal of Applied Physics
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Report on CLEO/QELS'93. III. Semiconductor Lasers, Optical Communications, and Optical Devices.
1993 · Yawara KANEKO, Tomoyuki MIYAMOTO, et al. · The Review of Laser Engineering
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630nm Wavelength GaInP/AlInP Multi-Quantum Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GSMBE)
1991 · Akihiko KIKUCHI, Yawara KANEKO, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 28
Citation count: 974
H-index: 11
I10-index: 11
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