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Ching-Hsueh Chiu

Observed names: Ching Hsueh Chiu, Ching‐Hsueh Chiu
ORCID: 0009-0004-7001-9222
Observed ORCID: 0009-0004-7001-9222
OpenAlex ID: A5108384346
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
2014 · Bing-Chen Lin, Kuo-Ju Chen, et al. · Optics Express · 64
Effect of the surface-plasmon–exciton coupling and charge transfer process on the photoluminescence of metal–semiconductor nanostructures
2013 · Jun Yin, Chuang Yue, et al. · Nanoscale · 61
Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
2011 · Po-Min Tu, Chun-Yen Chang, et al. · Applied Physics Letters · 59
High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2nanomasks
2012 · Ching-Hsueh Chiu, Chien-Chung Lin, et al. · Nanotechnology · 41
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Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
2010 · Ching-Hsueh Chiu, Da-Wei Lin, et al. · Applied Physics Express · 39
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Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL
2013 · Bing-Cheng Lin, Kuo-Ju Chen, et al. · IEEE Photonics Technology Letters · 38
Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
2017 · Tzu-Neng Lin, Svette Reina Merden Santiago, et al. · Scientific Reports · 35
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UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections
2017 · Zi-Hui Zhang, Chunshuang Chu, et al. · Optics Letters · 32
Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s
2019 · Chih-Chiang Shen, Tsung-Chi Hsu, et al. · Nanoscale Research Letters · 30
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High Q microcavity light emitting diodes with buried AlN current apertures
2011 · Bo-Siao Cheng, Yun-Lin Wu, et al. · Applied Physics Letters · 23
Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells
2015 · Yu-Lin Tsai, Sheng-Wen Wang, et al. · Optics Express · 22
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
2014 · Chia-Yu Lee, An-Jye Tzou, et al. · Nanoscale Research Letters · 22
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Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction
2019 · Chih-Chiang Shen, Yun-Ting Lu, et al. · Crystals · 21
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Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates
2010 · Ching-Hsueh Chiu, Po-Min Tu, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 21
Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
2011 · Chu-Li Chao, Rong Xuan, et al. · IEEE Photonics Technology Letters · 20
Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection
2020 · Dung-Sheng Tsai, Ping-Yu Chiang, et al. · Micromachines · 17
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Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
2011 · Ching-Hsueh Chiu, Chien-Chung Lin, et al. · IEEE Journal of Quantum Electronics · 17
Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
2010 · Ching-Hsueh Chiu, Da-Wei Lin, et al. · Journal of Crystal Growth · 17
Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications
2023 · Ching-Hsueh Chiu, Yu-Ting Chen, et al. · Nanotechnology · 15
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Room temperature lasing with high group index in metal-coated GaN nanoring
2011 · Yow-Gwo Wang, Shu-Wei Chang, et al. · Applied Physics Letters · 15
Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells
2013 · Cheng-Chang Chen, Ching-Hsueh Chiu, et al. · Applied Physics Letters · 14
Lasing in metal-coated GaN nanostripe at room temperature
2011 · Yow-Gwo Wang, Cheng-Chang Chen, et al. · Applied Physics Letters · 14
High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers
2014 · Zhen-Yu Li, Ray-Hua Horng, et al. · IEEE Journal of Quantum Electronics · 12
Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
2012 · Ching-Hsueh Chiu, Lung-Hsing Hsu, et al. · IEEE Photonics Technology Letters · 10
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
2014 · Ming-Ta Tsai, Chung-Ming Chu, et al. · Nanoscale Research Letters · 9
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Works count: 58
Citation count: 727
H-index: 17
I10-index: 24
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