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Kheireddine Ghaffour
Observed names:
Ghaffour Kheireddine,
K. GHAFFOUR,
K. Ghaffour
Institution:
University of Abou Bekr Belkaïd
Observed institution:
University of Abou Bekr Belkaïd
OpenAlex ID:
A5108616257
Optimizing the performance of photovoltaic cells IBC (contact back interdigitated) by numerical simulation
2019
·
Nadjat Benadla
, Kheireddine Ghaffour
·
International Journal of Electrical and Computer Engineering (IJECE)
·
7
PDF
Design and Modeling of a Three-axis Piezoresistive Microelectronic Accelerometer
2014
·
N. Benmoussa
, A. Benichou
, et al.
·
Physics Procedia
·
5
PDF
Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs
2020
·
Mokeddem Nadjet
, Ghaffour Kheireddine
·
International Journal of Electrical and Computer Engineering (IJECE)
·
3
PDF
Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications
2017
·
Z. A. Djennati
, K. Ghaffour
·
International Journal of Electrical and Computer Engineering (IJECE)
·
2
PDF
2-D physical modeling and DC optimization of a double delta doped In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT
2015
·
Z. A. Djennati
, Z. Kourdi
, et al.
·
International Symposium on Advanced Topics in Electrical Engineering
·
1
Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor
2010
·
R. Otmani
, N. Benmoussa
, et al.
·
Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)
·
1
The high pressure behaviour of InSb and β-SiC
1992
·
H. Aourag
, G. Merad
, et al.
·
Computational Materials Science
·
1
Influence of doping concentration on the performances of multi-junction solar cell InGaP/InGaAs/Ge
2026
·
Khadidja Djeriouat
, Salim Kerai
, et al.
·
International Journal of Power Electronics and Drive Systems/International Journal of Electrical and Computer Engineering
PDF
Impact of c-Si Substrate and Front Surface Passivation on Interdigitated Back Contact Silicon Heterojunction Solar Cell with 2D Simulation Study
2017
·
Nadera Berrouba-Tani
, Kheireddine Ghaffour
·
International Renewable and Sustainable Energy Conference (IRSEC)
Simulation of electrical properties of InP/InGaAs heterojunction bipolar transistors in microwave
2016
·
Y. BERRICHI
, K. GHAFFOUR
·
Materials research proceedings
PDF
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Works count:
10
Citation count:
20
H-index:
3
I10-index:
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