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Author

Koji Ashida

Observed name: 芦田, 晃嗣
OpenAlex ID: A5108644078
Tip-Enhanced Raman Scattering of the Local Nanostructure of Epitaxial Graphene Grown on 4H-SiC (0001)
2014 · Sanpon Vantasin, Ichiro Tanabe, et al. · The Journal of Physical Chemistry C · 44
Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000–1)
2014 · Toshiaki Suzuki, Tamitake Itoh, et al. · Physical Chemistry Chemical Physics · 27
Crystallographic orientation dependence of SEM contrast revealed by SiC polytypes
2015 · Koji Ashida, Tomonori Kajino, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 23
Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
2017 · Yuki Tabuchi, Koji Ashida, et al. · Journal of Applied Physics · 16
Evaluation of Polishing-Induced Subsurface Damage of 4H-SiC (0001) by Cross-Sectional Electron Backscattered Diffraction and Synchrotron X-Ray Micro-Diffraction
2016 · Koji Ashida, Daichi Dojima, et al. · MRS Advances · 13
In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
2017 · Daichi Dojima, Koji Ashida, et al. · Journal of Crystal Growth · 12
Formation of basal plane stacking faults on the ( 0001¯ ) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
2017 · Kohei Ohtomo, Nana Matsumoto, et al. · Journal of Crystal Growth · 11
Detection of Defects on SiC Substrate by SEM and Classification Using Deep Learning
2018 · Shota Monno, Yoshifumi Kamada, et al. · Lecture notes on data engineering and communications technologies · 8
Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
2018 · Koji Ashida, Daichi Dojima, et al. · Materials science forum · 4
Evaluation of growth sector orientation changes of high B doped high pressure and high temperature diamond by high resolution electron backscatter diffraction study
2019 · Akio Matsushita, Yuki Tsuchida, et al. · Japanese Journal of Applied Physics · 3
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Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging
2017 · Koji Ashida, Toru Aiso, et al. · Materials science forum · 2
Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
2018 · Nana Matsumoto, Hiroaki Shinya, et al. · Materials science forum · 1
SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
2017 · Yuki Tabuchi, Masashi Sonoda, et al. · Materials science forum · 1
Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
2017 · Kohei Ohtomo, Nana Matsumoto, et al. · Materials science forum · 1
Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
2017 · Satoshi Torimi, Koji Ashida, et al. · Materials science forum · 1
Crystalline Evaluation of p+HPHT diamond by Electron Backscatter Diffraction
2017 · Akio Matsushita, Koji Ashida, et al. · The Japan Society of Applied Physics
The control of hetero-interface of AlN/SiC by sublimation growth
2017 · Satoshi Ito, Daichi Dojima, et al. · The Japan Society of Applied Physics
Quantitative observation of low energy electron channeling contrast from sub‐nanometer thick surface layers using hexagonal Silicon Carbide single crystal
2016 · Koji Ashida, Yasunori Kutsuma, et al. · European Microscopy Congress 2016: Proceedings
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Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
2014 · Koji Ashida, Tomonori Kajino, et al. · Materials science forum
Si-pressure dependence of graphene growth mechanism on 4H-SiC{0001}
2013 · Koji Ashida · The Japan Society of Applied Physics
Tip-enhanced Raman Spectroscopic study of local structures of epitaxial graphene grown on SiC
2013 · Sanpon Vantasin, Toshiaki Suzuki, et al. · 分子科学討論会講演プログラム&要旨(Web)
低速電子線チャネリング効果を用いたSiC結晶表面の終端構造評価
· 芦田, 晃嗣 · Institutional Repositories DataBase (IRDB)
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Works count: 22
Citation count: 167
H-index: 8
I10-index: 7
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