Author

Ahlam Guen-Bouazza

Observed name: Ahlam GUEN-BOUAZZA

Institution: University of Abou Bekr Belkaïd

Observed institution: University of Abou Bekr Belkaïd

OpenAlex ID: A5108674453

DC performance analysis of a 20nm gate lenght n-type silicon GAA junctionless (Si JL-GAA) transistor

2020 · Faiza Merad, Ahlam Guen-Bouazza · International Journal of Power Electronics and Drive Systems/International Journal of Electrical and Computer Engineering · 13

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DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

2020 · Amin Boursali, Ahlam Guen-Bouazza, et al. · International Journal of Electrical and Computer Engineering (IJECE) · 7

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Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

2017 · Mohammed Khaouani, Ahlam Guen-Bouazza · International Journal of Electrical and Computer Engineering (IJECE) · 6

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The importance of using dual channel heterostructure in strained P-MOSFETs

2018 · Amine Mohammed TABERKIT, Ahlam GUEN-BOUAZZA, et al. · International Conference on Communications and Electrical Engineering (ICCEE) · 3

Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure

2018 · Amine Mohammed Taberkit, Ahlam Guen-Bouazza, et al. · International Journal of Electrical and Computer Engineering (IJECE) · 2

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Exploring the cross-section dimension and related characteristics in the design of new rectangular SI-GAA Junction-less

2023 · Faiza Merad, Ahmed-Ali Kanoun, et al. · International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS)

Temperature Variation Effects in Partially Depleted SOI N - Channel Mosfets

2015 · Ahlam Guen-Bouazza, Benyounes Bouazza, et al. · Journal of New Technology and Materials

Works count: 7

Citation count: 31

H-index: 3

I10-index: 1