Author

T.L. Ng

Observed names: T. L Ng, T. L. NG, T. L. Ng, T. Ng, T.-L. Ng, TL Ng, Tat Lin Ng, Tat-Lin Ng, Tat‐Lin Ng

Institution: Wrexham University

Observed institutions: Aberystwyth University, Wrexham University, University of Manchester, University of Wales

OpenAlex ID: A5108809442

The growth by MOCVD using new group VI sources and assessment by HRTEM and Cl of Zn-based II–VI single crystal layers

1985 · B. Cockayne, P.J. Wright, et al. · Journal of Crystal Growth · 38

High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVD

1984 · J.O. Williams, T.L. Ng, et al. · Journal of Crystal Growth · 35

Vacuum ultra-violet spectra of formic and acetic acids

1975 · Stephen Bell, T. L. Ng, et al. · Journal of the Chemical Society Faraday Transactions 2 Molecular and Chemical Physics · 31

A structural and compositional analysis of interfaces in ZnSe0.94S0.06 layers grown on to GaAs by OMCVD

1984 · B. Cockayne, P. J. Wright, et al. · Journal of Materials Science · 23

Optical spectroscopy of epitaxial Ga2Se3 layers from the far infrared to the ultraviolet

1996 · S. Morley, M. von der Emde, et al. · Journal of Applied Physics · 22

Preparation and characteristics of diamond-like carbon films

1988 · J Franks, TL Ng, et al. · Vacuum · 15

High resolution transmission electron microscopy (HRTEM) of epitaxially grown ZnSe and ZnSe/GaAs interfaces

1984 · J. O. Williams, E. S. Crawford, et al. · Journal of Materials Science Letters · 14

MOVPE growth of magnesium cadmium sulphide: rocksalt or sphalerite?

1997 · I.B. Poole, T.L. Ng, et al. · Journal of Crystal Growth · 13

Metal‐organic vapor phase epitaxial growth of cubic Gallium selenide, Ga2Se3

1996 · Tat Lin Ng, Nicolas Maung, et al. · Chemical Vapor Deposition · 12

Polarity determination in 〈100〉-orientated GaSb by high-resolution transmission electron microscopy at 300 kV

1988 · A. C. Wright, T. L. Ng, et al. · Philosophical Magazine Letters · 12

Unusual Binary Optical Reflectivity of Highly Structured Epitaxial Gallium Selenide Thin Films

2000 · A. C. Wright, T.-L. Ng, et al. · Advanced Materials · 10

Thermal decomposition of di-tertiarybutyl selenide and dimethylzinc in a metalorganic vapour phase epitaxy reactor

1997 · G.H. Fan, N. Maung, et al. · Journal of Crystal Growth · 10

MOCVD growth of Ga2Se3 on GaAs(100) and GaP(100): a Raman study

1996 · M. von der Emde, D.R.T. Zahn, et al. · Applied Surface Science · 10

Mass-spectrometric study of the pyrolysis reactions in the MOVPE of Ga2Se3 by in-situ gas sampling

1996 · N. Maung, G.H. Fan, et al. · Journal of Crystal Growth · 9

A study of the mechanism of the reaction of trimethylgallium with hydrogen selenide

1999 · Nicholas Maung, Guanghan Fan, et al. · Journal of Materials Chemistry · 7

Growth of MgS by MOVPE: the choice of sulphur precursor

1998 · L. D Stockton, T. L Ng, et al. · Journal of Materials Science Materials in Electronics · 7

High resolution transmission and analytical electron microscopy for the characterisation of epilayers and interfaces in MOVPE grown ZnSe1−ySy

1985 · J.O. Williams, T.L. Ng, et al. · Journal of Crystal Growth · 7

Homogeneous thermal decomposition of dimethylzinc in a metal–organic vapour phase epitaxy reactor

1995 · Guanghan Fan, Nicholas Maung, et al. · Journal of the Chemical Society Faraday Transactions · 6

Direct synthesis of II 3 -V 2 compound semiconductors by the heterovalent exchange reaction

1999 · Andrew C. Wright, Tat-Lin Ng, et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 4

MOVPE growth of ZnSe and the effect of initiation conditions: a study by transmission electron microscopy

1998 · A.C. Wright, D. Gnoth, et al. · Applied Surface Science · 4

Dynamic vapour pressure measurements of di-tertiarybutyl sulphide using an ultrasonic monitor

1998 · L.D. Stockton, T.L. Ng, et al. · Journal of Crystal Growth · 3

Growth process studies by reflectance anisotropy spectroscopy on MOVPE ZnSe

1997 · D.N. Gnoth, I.B. Poole, et al. · Journal of Crystal Growth · 3

The preparation of plan‐view TEM samples of ZnSe epilayers on GaAs (100) substrates by selective photoelectrochemical etching

1988 · T. L. Ng, M. F. Pemble, et al. · Journal of Microscopy · 2

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 · D.N. Gnoth, T.L. Ng, et al. · Journal of Crystal Growth · 1

ChemInform Abstract: Unusual Binary Optical Reflectivity of Highly Structured Epitaxial Gallium Selenide Thin Films.

2000 · Andrew C. Wright, Tat‐Lin Ng, et al. · ChemInform

Works count: 26

Citation count: 298

H-index: 10

I10-index: 13