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Author

Sisung Yoon

Observed names: S. W. Yoon, S. Yoon, SiSung Yoon
Institution: Soongsil University
ORCID: 0009-0007-0677-302X
Observed ORCID: 0009-0007-0677-302X
OpenAlex ID: A5109071923
Formation of interface traps in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78 K
1991 · N. S. Saks, R. B. Klein, et al. · Journal of Applied Physics · 32
Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors
1989 · R. C. Hughes, W. R. Dawes, et al. · Journal of Applied Physics · 23
Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack
2024 · SeungYoon Oh, SiSung Yoon, et al. · Applied Physics Letters · 14
Enhanced UVC Responsivity of Heteroepitaxial α-Ga2O3 Photodetector with Ultra-Thin HfO2 Interlayer
2025 · SiSung Yoon, SeungYoon Oh, et al. · Micromachines · 9
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Scalable Van Der Waals Integration of III‐N Devices Over 2D Materials for CMOS‐Compatible Architectures
2025 · Gyuhyung Lee, Youngtek Oh, et al. · Advanced Materials · 9
Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates With Ferroelectric AlScN Gate Stack
2025 · Sisung Yoon, Seungyoon Oh, et al. · IEEE Electron Device Letters · 5
Ferroelectric AlScN Field-Plated Vertical β -Ga 2 O 3 SBD With Improved On-Resistance and Breakdown Voltage
2026 · Sisung Yoon, Hyojung Kim, et al. · IEEE Transactions on Electron Devices · 3
Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
2024 · Gyuhyung Lee, Jeongyong Yang, et al. · Electronics · 3
Geometric and Area Scaling Effects on Ferroelectric Properties of Al₀.₈Sc₀.₂N-Based Capacitive Memory
2026 · Yoojin Lim, Hyeong Jun Joo, et al. · IEEE Journal of the Electron Devices Society
Area- and Shape-dependent Ferroelectric Properties of AlScN-based MFM Capacitors
2025 · Yoojin Lim, Hyeongjun Joo, et al. · International Conference on Solid State Devices and Materials (SSDM)
A novel substrate hot electron and hole injection structure with a double-implanted buried-channel MOSFET
1991 · S. Yoon, R. Siergiej, et al. · IEEE Transactions on Electron Devices
A new method of interface trap modeling in quantized MOSFET inversion layers
1991 · R.R. Siergiej, S. Yoon, et al. · IEEE Transactions on Electron Devices
Works count: 12
Citation count: 98
H-index: 5
I10-index: 3
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