Get started
Author

Hood Chatham

Oxygen diffusion barrier properties of transparent oxide coatings on polymeric substrates
1996 · Hood Chatham · Surface and Coatings Technology · 361
Total and partial electron collisional ionization cross sections for CH4, C2H6, SiH4, and Si2H6
1984 · H. Chatham, D. Hils, et al. · The Journal of Chemical Physics · 292
Radical species in argon-silane discharges
1983 · R. Robertson, D. Hils, et al. · Applied Physics Letters · 141
Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone
2004 · Yoshihide Senzaki, Seung Park, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 104
Ion chemistry in silane dc discharges
1985 · H. Chatham, A. Gallagher · Journal of Applied Physics · 81
Doubly charged ion mass spectra: III—N‐alkanes
1982 · B. E. Jones, L. E. Abbey, et al. · Organic Mass Spectrometry · 52
Reactions of He+, Ne+, and Ar+ with CH4, C2H6, SiH4, and Si2H6
1983 · H. Chatham, D. Hils, et al. · The Journal of Chemical Physics · 50
High Deposition Rate P-I-N Solar Cells Prepared from Disilane Using VHF Discharges
1989 · H. Chatham, P. K. Bhat · MRS Proceedings · 28
High-efficiency amorphous silicon p-i-n solar cells deposited from disilane at rates up to 2 nm/s using VHF discharges
1989 · Hood Chatham, Pawan Bhat, et al. · Journal of Non-Crystalline Solids · 24
Improving tunneling junction in amorphous silicon tandem solar cells
1990 · D. S. Shen, R. E. I. Schropp, et al. · Applied Physics Letters · 21
Equivalent oxide thickness reduction of interpoly dielectric using ALD-Al2O3 for flash device application
2004 · Tai-Peng Lee, Chuck Jang, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 16
High-deposition-rate amorphous silicon solar cells: silane or disilane?
1991 · D.S. Shen, H. Chatham, et al. · Solar Cells · 7
Amorphous silicon solar cells prepared at high deposition rates
1990 · Dashen S. Shen, Pawan Bhat, et al. · STIN · 7
Comparative Discharge Diagnostic Study of Silane, Disilane, and Germane RF Discharges Using Optical Emission Spectroscopy and Mass Spectrometry
1988 · H. Chatham, P. K. Bhat · MRS Proceedings · 6
Derivation of Rate Constants for the Batch Furnace Radical Oxidation of Silicon Wafers via Hydrogen Combustion
2009 · Jeff Bailey, Thomas Qiu, et al. · Journal of The Electrochemical Society · 4
High efficiency a-Si/a-Si tandem solar cells
2002 · D.S. Shen, R.E.I. Schropp, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 4
Preparation and properties of high deposition rate a-Si:H films and solar cells using disilane
1988 · P.K. Bhat, C. Marshall, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 4
Low Temperature Silicon Dioxide Deposition and Characterization
2006 · Hood Chatham, Martin Mogaard, et al. · MRS Proceedings · 2
Atomic layer deposition of high-k thin films for gate and capacitor dielectrics
2004 · Y. Senzaki, H. Chatham, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 2
Recent progress in multichamber deposition of high-quality amorphous silicon solar cells on planar and compound curved substrates at GSI
1989 · R.E.I. Schropp, B. Von Roedern, et al. · Solar Cells · 2
Low-Temperature Deposition of Silicon Dioxide and Silicon Nitride for Dual Spacer Application
2007 · Hood Chatham, Martin Mogaard, et al. · ASMC proceedings · 1
VUV Reflectometry for Thin Film Thickness & Composition Metrology and Process Development & Control
2007 · Matthew Weldon, Hood Chatham, et al. · AIP conference proceedings · 1
PDF
B(Ch3)3 as P Layer Doping Gas
1990 · D. S. Shen, H. Chatham, et al. · MRS Proceedings · 1
Preparation and properties of high deposition a-Si:H films and solar cells using disilane
1989 · Hood Chatham, Pawan Bhat · NASA STI/Recon Technical Report N · 1
ALD of Advanced High-k and Metal Gate Stacks for MOS Devices
2006 · Yoshi Senzaki, James Gutt, et al. · ECS Meeting Abstracts
PDF
Works count: 30
Citation count: 1,212
H-index: 11
I10-index: 11
Year
Topic
Type